| dc.contributor.author |
Ding, Liang. |
| dc.contributor.author |
Chen, Tupei. |
| dc.contributor.author |
Wong, Jen It. |
| dc.contributor.author |
Yang, Ming. |
| dc.contributor.author |
Liu, Yang. |
| dc.contributor.author |
Ng, Chi Yung. |
| dc.contributor.author |
Liu, Yu Chan. |
| dc.contributor.author |
Tung, Chih Hang. |
| dc.contributor.author |
Trigg, Alastair David. |
| dc.contributor.author |
Fung, Stevenson Hon Yuen. |
| dc.date.accessioned |
2010-09-06T00:55:21Z |
| dc.date.available |
2010-09-06T00:55:21Z |
| dc.date.copyright |
2006 |
| dc.date.issued |
2010-09-06T00:55:21Z |
| dc.identifier.citation |
Ding, L., Chen, T. P., Wong, J. I., Yang, M., Liu, Y., Ng, C. Y., et al. (2006). Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO2 thin films. Applied Physics Letters, 89, 1-3. |
| dc.identifier.issn |
0003-6951 |
| dc.identifier.uri |
http://hdl.handle.net/10220/6401 |
| dc.description.abstract |
A densely stacked silicon nanocrystal layer embedded in a SiO2 thin film is synthesized with Si ion implantation. The dielectric functions of the nanocrystal layer are determined with spectroscopic ellipsometry. The dielectric functions show a significant suppression as compared to that of bulk crystalline Si. Thermal annealing leads to an evolution of the dielectric functions from the amorphous towards crystalline state. For an insufficient annealing, the dielectric functions present a single broad peak, being similar to that of amorphous Si. However, a sufficient annealing leads to the emergence of the two-peak structure which is similar to that of bulk crystalline Si. In addition, the dielectric functions increase with annealing with a trend towards bulk Si. |
| dc.format.extent |
3 p. |
| dc.language.iso |
en |
| dc.relation.ispartofseries |
Applied physics letters |
| dc.rights |
Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v89/i25/p251910_s1?isAuthorized=no |
| dc.subject |
DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics. |
| dc.title |
Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO2 thin films. |
| dc.type |
Journal Article |
| dc.identifier.doi |
http://dx.doi.org/10.1063/1.2410227 |
| dc.description.version |
Published version |
| dc.contributor.organization |
Singapore Institute of Manufacturing Technology |
| dc.contributor.organization |
Institute of Microelectronics |
