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Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO2 thin films.

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Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO2 thin films.

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dc.contributor.author Ding, Liang.
dc.contributor.author Chen, Tupei.
dc.contributor.author Wong, Jen It.
dc.contributor.author Yang, Ming.
dc.contributor.author Liu, Yang.
dc.contributor.author Ng, Chi Yung.
dc.contributor.author Liu, Yu Chan.
dc.contributor.author Tung, Chih Hang.
dc.contributor.author Trigg, Alastair David.
dc.contributor.author Fung, Stevenson Hon Yuen.
dc.date.accessioned 2010-09-06T00:55:21Z
dc.date.available 2010-09-06T00:55:21Z
dc.date.copyright 2006
dc.date.issued 2010-09-06T00:55:21Z
dc.identifier.citation Ding, L., Chen, T. P., Wong, J. I., Yang, M., Liu, Y., Ng, C. Y., et al. (2006). Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO2 thin films. Applied Physics Letters, 89, 1-3.
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10220/6401
dc.description.abstract A densely stacked silicon nanocrystal layer embedded in a SiO2 thin film is synthesized with Si ion implantation. The dielectric functions of the nanocrystal layer are determined with spectroscopic ellipsometry. The dielectric functions show a significant suppression as compared to that of bulk crystalline Si. Thermal annealing leads to an evolution of the dielectric functions from the amorphous towards crystalline state. For an insufficient annealing, the dielectric functions present a single broad peak, being similar to that of amorphous Si. However, a sufficient annealing leads to the emergence of the two-peak structure which is similar to that of bulk crystalline Si. In addition, the dielectric functions increase with annealing with a trend towards bulk Si.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Applied physics letters
dc.rights Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v89/i25/p251910_s1?isAuthorized=no
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics.
dc.title Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO2 thin films.
dc.type Journal Article
dc.identifier.doi http://dx.doi.org/10.1063/1.2410227
dc.description.version Published version
dc.contributor.organization Singapore Institute of Manufacturing Technology
dc.contributor.organization Institute of Microelectronics

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