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Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance.

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Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance.

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dc.contributor.author Zhao, P.
dc.contributor.author Yang, X. H.
dc.contributor.author Ng, Chi Yung.
dc.contributor.author Chen, Tupei.
dc.contributor.author Ding, Liang.
dc.contributor.author Yang, Ming.
dc.contributor.author Wong, Jen It.
dc.contributor.author Tse, Man Siu.
dc.contributor.author Trigg, Alastair David.
dc.contributor.author Fung, Stevenson Hon Yuen.
dc.date.accessioned 2010-09-06T01:27:07Z
dc.date.available 2010-09-06T01:27:07Z
dc.date.copyright 2006
dc.date.issued 2010-09-06T01:27:07Z
dc.identifier.citation Zhao, P., Yang, X. H., Ng, C. Y., Chen, T., Ding, L., & Yang, M., et al. (2006). Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance. IEEE transactions on electron devices, 53(4), 730-736.
dc.identifier.issn 0018-9383
dc.identifier.uri http://hdl.handle.net/10220/6403
dc.description.abstract In this paper, the authors have studied the influence of silicon nanocrystal (nc-Si) distributed in the gate oxide on the capacitance for the circumstances that the nc-Si does not form conductive percolation tunneling paths connecting the gate to the substrate. The nc-Si is synthesized by Si-ion implantation. The effective dielectric constant of the gate oxide in the nc-Si distributed region is calculated based on a sublayer model of the nc-Si distribution and the Maxwell-Garnett effective medium approximation. After the depth distribution of the effective dielectric constant is obtained, the MOS capacitance is determined. Two different nc-Si distributions, i.e., partial and full nc-Si distributions in the gate oxide, have been considered. The MOS capacitance obtained from the modeling has been compared to the capacitance measurement for a number of samples with various gate-oxide thicknesses, implantation energies and dosages, and an excellent agreement has been achieved for all the samples. A detailed picture of the influence of implantation energy and implantation dosage on the MOS capacitance has been obtained.
dc.format.extent 7 p.
dc.language.iso en
dc.relation.ispartofseries IEEE transactions on electron devices
dc.rights IEEE Transactions on Electron Devices © 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics.
dc.title Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance.
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1109/TED.2006.870872
dc.description.version Published version
dc.contributor.organization Institute of Microelectronics

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