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Charging mechanism in a SiO2 matrix embedded with Si nanocrystals

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Charging mechanism in a SiO2 matrix embedded with Si nanocrystals

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Title: Charging mechanism in a SiO2 matrix embedded with Si nanocrystals
Author: Liu, Yang; Chen, Tupei; Ding, Liang; Zhang, Sam; Fu, Yong Qing; Fung, Stevenson Hon Yuen
Copyright year: 2006
Abstract: One of the applications of a Si nanocrystals (nc-Si) embedded in a SiO2 matrix is in the area of nonvolatile memory devices based on the charge storage in the material system. However, whether the charge trapping mainly occurs at the nc-Si/SiO2 interface or in the nc-Si is still unclear. In this work, by x-ray photoemission spectroscopy analysis of the Si 2p peaks, the concentrations of both the nc-Si and the Si suboxides that exist at the nc-Si/SiO2 interface are determined as a function of thermal annealing, and the charging effect is also measured by monitoring the shift of the surface C 1s peak. It is observed that the annealing-caused reduction of the total concentration of the interfacial suboxides is much faster than that of both the C 1s shift and the nc-Si concentration. In addition, the trend of the C 1s shift coincides with that of the nc-Si concentration. The results suggest that the Si nanocrystal, rather than the nc-Si/SiO2 interface, plays the dominant role in the charging effect.
Subject: DRNTU::Engineering::Electrical and electronic engineering.DRNTU::Engineering::Mechanical engineering.
Type: Journal Article
Series/ Journal Title: Journal of applied physics
School: School of Electrical and Electronic Engineering
Rights: Journal of Applied Physics © copyright 2006 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v100/i9/p096111_s1?isAuthorized=no
Version: Published version

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