mirage

Charging mechanism in a SiO2 matrix embedded with Si nanocrystals

DSpace/Manakin Repository

 

Search DR-NTU


Advanced Search Subject Search

Browse

My Account

Charging mechanism in a SiO2 matrix embedded with Si nanocrystals

Show simple item record

dc.contributor.author Liu, Yang
dc.contributor.author Chen, Tupei
dc.contributor.author Ding, Liang
dc.contributor.author Zhang, Sam
dc.contributor.author Fu, Yong Qing
dc.contributor.author Fung, Stevenson Hon Yuen
dc.date.accessioned 2010-09-06T01:41:27Z
dc.date.available 2010-09-06T01:41:27Z
dc.date.copyright 2006
dc.date.issued 2010-09-06T01:41:27Z
dc.identifier.citation Liu, Y., Chen, T. P., Ding, L., Zhang, S., Fu, Y. Q., & Fung, S. H. Y., (2006). Charging mechanism in a SiO2 matrix embedded with Si nanocrystals. Journal of Applied Physics, 100, 1-3.
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10220/6404
dc.description.abstract One of the applications of a Si nanocrystals (nc-Si) embedded in a SiO2 matrix is in the area of nonvolatile memory devices based on the charge storage in the material system. However, whether the charge trapping mainly occurs at the nc-Si/SiO2 interface or in the nc-Si is still unclear. In this work, by x-ray photoemission spectroscopy analysis of the Si 2p peaks, the concentrations of both the nc-Si and the Si suboxides that exist at the nc-Si/SiO2 interface are determined as a function of thermal annealing, and the charging effect is also measured by monitoring the shift of the surface C 1s peak. It is observed that the annealing-caused reduction of the total concentration of the interfacial suboxides is much faster than that of both the C 1s shift and the nc-Si concentration. In addition, the trend of the C 1s shift coincides with that of the nc-Si concentration. The results suggest that the Si nanocrystal, rather than the nc-Si/SiO2 interface, plays the dominant role in the charging effect.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Journal of applied physics
dc.rights Journal of Applied Physics © copyright 2006 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v100/i9/p096111_s1?isAuthorized=no
dc.subject DRNTU::Engineering::Electrical and electronic engineering.
dc.subject DRNTU::Engineering::Mechanical engineering.
dc.title Charging mechanism in a SiO2 matrix embedded with Si nanocrystals
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.2374929
dc.description.version Published version

Files in this item

Files Size Format View
Charging mechan ... d with Si nanocrystals.pdf 86.27Kb PDF View/Open

This item appears in the following Collection(s)

Show simple item record

Statistics

Total views

All Items Views
Charging mechanism in a SiO2 matrix embedded with Si nanocrystals 311

Total downloads

All Bitstreams Views
Charging mechanism in a SiO 2 matrix embedded with Si nanocrystals.pdf 128

Top country downloads

Country Code Views
United States of America 67
China 31
Singapore 7
Ukraine 4
Japan 3

Top city downloads

city Views
Mountain View 50
Beijing 18
Singapore 7
Moscow 2
Southampton 2