Charging mechanism in a SiO2 matrix embedded with Si nanocrystals

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Charging mechanism in a SiO2 matrix embedded with Si nanocrystals

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dc.contributor.author Liu, Yang
dc.contributor.author Chen, Tupei
dc.contributor.author Ding, Liang
dc.contributor.author Zhang, Sam
dc.contributor.author Fu, Yong Qing
dc.contributor.author Fung, Stevenson Hon Yuen
dc.date.accessioned 2010-09-06T01:41:27Z
dc.date.available 2010-09-06T01:41:27Z
dc.date.copyright 2006
dc.date.issued 2010-09-06T01:41:27Z
dc.identifier.citation Liu, Y., Chen, T. P., Ding, L., Zhang, S., Fu, Y. Q., & Fung, S. H. Y., (2006). Charging mechanism in a SiO2 matrix embedded with Si nanocrystals. Journal of Applied Physics, 100, 1-3.
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10220/6404
dc.description.abstract One of the applications of a Si nanocrystals (nc-Si) embedded in a SiO2 matrix is in the area of nonvolatile memory devices based on the charge storage in the material system. However, whether the charge trapping mainly occurs at the nc-Si/SiO2 interface or in the nc-Si is still unclear. In this work, by x-ray photoemission spectroscopy analysis of the Si 2p peaks, the concentrations of both the nc-Si and the Si suboxides that exist at the nc-Si/SiO2 interface are determined as a function of thermal annealing, and the charging effect is also measured by monitoring the shift of the surface C 1s peak. It is observed that the annealing-caused reduction of the total concentration of the interfacial suboxides is much faster than that of both the C 1s shift and the nc-Si concentration. In addition, the trend of the C 1s shift coincides with that of the nc-Si concentration. The results suggest that the Si nanocrystal, rather than the nc-Si/SiO2 interface, plays the dominant role in the charging effect.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Journal of applied physics
dc.rights Journal of Applied Physics © copyright 2006 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v100/i9/p096111_s1?isAuthorized=no
dc.subject DRNTU::Engineering::Electrical and electronic engineering.
dc.subject DRNTU::Engineering::Mechanical engineering.
dc.title Charging mechanism in a SiO2 matrix embedded with Si nanocrystals
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.2374929
dc.description.version Published version

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