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Static dielectric constant of isolated silicon nanocrystals embedded in a SiO2 thin film.

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Static dielectric constant of isolated silicon nanocrystals embedded in a SiO2 thin film.

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Title: Static dielectric constant of isolated silicon nanocrystals embedded in a SiO2 thin film.
Author: Ng, Chi Yung.; Chen, Tupei.; Ding, Liang.; Liu, Yang.; Fung, Stevenson Hon Yuen.; Tse, Man Siu.; Dong, Zhili.
Copyright year: 2006
Abstract: The static dielectric constant of isolated silicon nanocrystals (nc-Si) embedded in a SiO2 thin film synthesized by Si+ implantation has been determined from capacitance measurement based on the Maxwell–Garnett effective medium approximation and the stopping and range of ions in matter simulation. For the nc-Si with a mean size of ∼ 4.5 nm, the dielectric constant so determined is 9.8, being consistent with a theoretical prediction. This value is significantly lower than the static dielectric constant (11.9) of bulk crystalline Si, indicating the significance of nc-Si size effect. The information of nc-Si dielectric constant is not only important to the fundamental physics but also useful to the design and modeling of nc-Si-based memory devices.
Subject: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics.
Type: Journal Article
Series/ Journal Title: Applied physics letters
School: School of Electrical and Electronic Engineering
Rights: Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v88/i6/p063103_s1?isAuthorized=no
Version: Published version

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