mirage

Static dielectric constant of isolated silicon nanocrystals embedded in a SiO2 thin film

DSpace/Manakin Repository

 

Search DR-NTU


Advanced Search Subject Search

Browse

My Account

Static dielectric constant of isolated silicon nanocrystals embedded in a SiO2 thin film

Show simple item record

dc.contributor.author Ng, Chi Yung
dc.contributor.author Chen, Tupei
dc.contributor.author Ding, Liang
dc.contributor.author Liu, Yang
dc.contributor.author Fung, Stevenson Hon Yuen
dc.contributor.author Tse, Man Siu
dc.contributor.author Dong, Zhili
dc.date.accessioned 2010-09-06T03:05:53Z
dc.date.available 2010-09-06T03:05:53Z
dc.date.copyright 2006
dc.date.issued 2010-09-06T03:05:53Z
dc.identifier.citation Ng, C. Y., Chen, T. P., Ding, L., Liu, Y., Fung, S. H. Y., Tse, M. S., et al. (2006). Static dielectric constant of isolated silicon nanocrystals embedded in a SiO2 thin film. Applied Physics Letters, 88, 1-3.
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10220/6406
dc.description.abstract The static dielectric constant of isolated silicon nanocrystals (nc-Si) embedded in a SiO2 thin film synthesized by Si+ implantation has been determined from capacitance measurement based on the Maxwell–Garnett effective medium approximation and the stopping and range of ions in matter simulation. For the nc-Si with a mean size of ∼ 4.5 nm, the dielectric constant so determined is 9.8, being consistent with a theoretical prediction. This value is significantly lower than the static dielectric constant (11.9) of bulk crystalline Si, indicating the significance of nc-Si size effect. The information of nc-Si dielectric constant is not only important to the fundamental physics but also useful to the design and modeling of nc-Si-based memory devices.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Applied physics letters
dc.rights Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v88/i6/p063103_s1?isAuthorized=no
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
dc.title Static dielectric constant of isolated silicon nanocrystals embedded in a SiO2 thin film
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.2172009
dc.description.version Published version

Files in this item

Files Size Format View
Static dielectr ... d in a SiO 2 thin film.pdf 132.1Kb PDF View/Open

This item appears in the following Collection(s)

Show simple item record

Statistics

Total views

All Items Views
Static dielectric constant of isolated silicon nanocrystals embedded in a SiO2 thin film 300

Total downloads

All Bitstreams Views
Static dielectric constant of isolated silicon nanocrystals embedded in a SiO 2 thin film.pdf 186

Top country downloads

Country Code Views
United States of America 73
Singapore 24
China 15
Ukraine 8
Japan 6

Top city downloads

city Views
Mountain View 49
Singapore 23
Malang 4
Seattle 3
Bangkok 2