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Title:
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Improving crystal quality of InGaAs/GaAs quantum dots by inductively coupled Ar plasma.
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Author:
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Zhang, X. H.; Nie, Dong.; Mei, Ting.; Djie, Hery Susanto.; Ooi, Boon Siew.
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Copyright year:
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2006 |
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Abstract:
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The crystal quality of InGaAs/GaAs quantum dots (QDs) is substantially improved without redistribution of composition using inductively coupled Ar plasma exposure. After plasma exposure, the QDs exhibit an increase in photoluminescence intensity by a factor of 1.7 while keeping the peak wavelength unshifted, and the band gap blueshift after rapid thermal annealing is suppressed, denoting an improvement in thermal stability. The time-resolved photoluminescence shows an increase in carrier lifetime from 735 to 1140 ps by plasma exposure, indicating the mechanism of grown-in defects reduction in the QD regions. |
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Subject:
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DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials. |
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Type:
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Journal Article |
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Series/ Journal Title:
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Applied physics letters |
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School:
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School of Electrical and Electronic Engineering |
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Related Organization:
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Institute of Materials Research and Engineering |
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Rights:
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Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v88/i25/p251102_s1?isAuthorized=no |
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Version:
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Published version |
