| dc.contributor.author |
Zhang, X. H. |
| dc.contributor.author |
Nie, Dong. |
| dc.contributor.author |
Mei, Ting. |
| dc.contributor.author |
Djie, Hery Susanto. |
| dc.contributor.author |
Ooi, Boon Siew. |
| dc.date.accessioned |
2010-09-06T03:22:25Z |
| dc.date.available |
2010-09-06T03:22:25Z |
| dc.date.copyright |
2006 |
| dc.date.issued |
2010-09-06T03:22:25Z |
| dc.identifier.citation |
Zhang, X. H., Nie, D., Mei, T., Djie, H. S., & Ooi, B. S. (2006). Improving crystal quality of InGaAs/GaAs quantum dots by inductively coupled Ar plasma. Applied Physics Letters, 88, 1-3. |
| dc.identifier.issn |
0003-6951 |
| dc.identifier.uri |
http://hdl.handle.net/10220/6407 |
| dc.description.abstract |
The crystal quality of InGaAs/GaAs quantum dots (QDs) is substantially improved without redistribution of composition using inductively coupled Ar plasma exposure. After plasma exposure, the QDs exhibit an increase in photoluminescence intensity by a factor of 1.7 while keeping the peak wavelength unshifted, and the band gap blueshift after rapid thermal annealing is suppressed, denoting an improvement in thermal stability. The time-resolved photoluminescence shows an increase in carrier lifetime from 735 to 1140 ps by plasma exposure, indicating the mechanism of grown-in defects reduction in the QD regions. |
| dc.format.extent |
3 p. |
| dc.language.iso |
en |
| dc.relation.ispartofseries |
Applied physics letters |
| dc.rights |
Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v88/i25/p251102_s1?isAuthorized=no |
| dc.subject |
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials. |
| dc.title |
Improving crystal quality of InGaAs/GaAs quantum dots by inductively coupled Ar plasma. |
| dc.type |
Journal Article |
| dc.contributor.school |
School of Electrical and Electronic Engineering |
| dc.identifier.doi |
http://dx.doi.org/10.1063/1.2215602 |
| dc.description.version |
Published version |
| dc.contributor.organization |
Institute of Materials Research and Engineering |
