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Improving crystal quality of InGaAs/GaAs quantum dots by inductively coupled Ar plasma

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Improving crystal quality of InGaAs/GaAs quantum dots by inductively coupled Ar plasma

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dc.contributor.author Zhang, X. H.
dc.contributor.author Nie, Dong
dc.contributor.author Mei, Ting
dc.contributor.author Djie, Hery Susanto
dc.contributor.author Ooi, Boon Siew
dc.date.accessioned 2010-09-06T03:22:25Z
dc.date.available 2010-09-06T03:22:25Z
dc.date.copyright 2006
dc.date.issued 2010-09-06T03:22:25Z
dc.identifier.citation Zhang, X. H., Nie, D., Mei, T., Djie, H. S., & Ooi, B. S. (2006). Improving crystal quality of InGaAs/GaAs quantum dots by inductively coupled Ar plasma. Applied Physics Letters, 88, 1-3.
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10220/6407
dc.description.abstract The crystal quality of InGaAs/GaAs quantum dots (QDs) is substantially improved without redistribution of composition using inductively coupled Ar plasma exposure. After plasma exposure, the QDs exhibit an increase in photoluminescence intensity by a factor of 1.7 while keeping the peak wavelength unshifted, and the band gap blueshift after rapid thermal annealing is suppressed, denoting an improvement in thermal stability. The time-resolved photoluminescence shows an increase in carrier lifetime from 735 to 1140 ps by plasma exposure, indicating the mechanism of grown-in defects reduction in the QD regions.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Applied physics letters
dc.rights Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v88/i25/p251102_s1?isAuthorized=no
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
dc.title Improving crystal quality of InGaAs/GaAs quantum dots by inductively coupled Ar plasma
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.2215602
dc.description.version Published version
dc.contributor.organization Institute of Materials Research and Engineering

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