mirage

Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide

DSpace/Manakin Repository

 

Search DR-NTU


Advanced Search Subject Search

Browse

My Account

Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide

Show full item record

Title: Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide
Author: Li, S.; Zhao, P.; Liu, Yang; Chen, Tupei; Ng, Chi Yung; Tse, Man Siu; Fung, Stevenson Hon Yuen; Liu, Yu Chan
Copyright year: 2004
Abstract: We report a study of influence of charging and discharging in Si nanocrystals (nc-Si), which are embedded throughout the gate oxide in metal-oxide-semiconductor (MOS) structures, on the current voltage and capacitance-voltage characteristics of the MOS structures. Very large current and capacitance are observed for the as-fabricated structures. However, charge trapping in the nanocrystals can reduce both the current and the capacitance dramatically. The trapped charges can also tunnel out from the nc-Si, leading to the recovery of both the current and the capacitance. The current reduction is attributed to the breaking of the nc-Si the change of the nc-Si capacitance as a result of the charge trapping.
Subject: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Type: Journal Article
Series/ Journal Title: Electrochemical and solid state letters
School: School of Electrical and Electronic Engineering
Related Organization: Singapore Institute of Manufacturing Technology
Rights: Electrochemical and Solid State Letters © copyright 2004 Electrochemical Society. The journal's website is located at http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=ESLEF600000700000700G134000001&idtype=cvips&gifs=yes&ref=no
Version: Published version

Files in this item

Files Size Format View
Charging effect ... ribution in gate oxide.pdf 620.3Kb PDF View/Open
   

DOI Query

- Get published version (via Digital Object Identifier)
   

This item appears in the following Collection(s)

Show full item record

Statistics

Total views

All Items Views
Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide 332

Total downloads

All Bitstreams Views
Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide.pdf 275

Top country downloads

Country Code Views
United States of America 79
China 70
Singapore 37
Russian Federation 14
India 9

Top city downloads

city Views
Mountain View 51
Singapore 35
Beijing 31
Ürümqi 6
Taipei 5