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Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide.

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Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide.

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Title: Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide.
Author: Li, S.; Zhao, P.; Liu, Yang.; Chen, Tupei.; Ng, Chi Yung.; Tse, Man Siu.; Fung, Stevenson Hon Yuen.; Liu, Yu Chan.
Copyright year: 2004
Abstract: We report a study of influence of charging and discharging in Si nanocrystals (nc-Si), which are embedded throughout the gate oxide in metal-oxide-semiconductor (MOS) structures, on the current voltage and capacitance-voltage characteristics of the MOS structures. Very large current and capacitance are observed for the as-fabricated structures. However, charge trapping in the nanocrystals can reduce both the current and the capacitance dramatically. The trapped charges can also tunnel out from the nc-Si, leading to the recovery of both the current and the capacitance. The current reduction is attributed to the breaking of the nc-Si the change of the nc-Si capacitance as a result of the charge trapping.
Subject: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics.
Type: Journal Article
Series/ Journal Title: Electrochemical and solid state letters
School: School of Electrical and Electronic Engineering
Related Organization: Singapore Institute of Manufacturing Technology
Rights: Electrochemical and Solid State Letters © copyright 2004 Electrochemical Society. The journal's website is located at http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=ESLEF600000700000700G134000001&idtype=cvips&gifs=yes&ref=no
Version: Published version

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