| dc.contributor.author |
Li, S. |
| dc.contributor.author |
Zhao, P. |
| dc.contributor.author |
Liu, Yang. |
| dc.contributor.author |
Chen, Tupei. |
| dc.contributor.author |
Ng, Chi Yung. |
| dc.contributor.author |
Tse, Man Siu. |
| dc.contributor.author |
Fung, Stevenson Hon Yuen. |
| dc.contributor.author |
Liu, Yu Chan. |
| dc.date.accessioned |
2010-09-06T03:32:49Z |
| dc.date.available |
2010-09-06T03:32:49Z |
| dc.date.copyright |
2004 |
| dc.date.issued |
2010-09-06T03:32:49Z |
| dc.identifier.citation |
Li, S., Zhao, P., Liu, Y., Chen, T. P., Ng, C. Y., Tse, M. S., et al. (2004). Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide. Electrochemical and Solid State Letters, 7, G134-G137. |
| dc.identifier.issn |
1099-0062 |
| dc.identifier.uri |
http://hdl.handle.net/10220/6408 |
| dc.description.abstract |
We report a study of influence of charging and discharging in Si nanocrystals (nc-Si), which are embedded throughout the gate oxide in metal-oxide-semiconductor (MOS) structures, on the current voltage and capacitance-voltage characteristics of the MOS structures. Very large current and capacitance are observed for the as-fabricated structures. However, charge trapping in the nanocrystals can reduce both the current and the capacitance dramatically. The trapped charges can also tunnel out from the nc-Si, leading to the recovery of both the current and the capacitance. The current reduction is attributed to the breaking of the nc-Si the change of the nc-Si capacitance as a result of the charge trapping. |
| dc.format.extent |
4 p. |
| dc.language.iso |
en |
| dc.relation.ispartofseries |
Electrochemical and solid state letters |
| dc.rights |
Electrochemical and Solid State Letters © copyright 2004 Electrochemical Society. The journal's website is located at http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=ESLEF600000700000700G134000001&idtype=cvips&gifs=yes&ref=no |
| dc.subject |
DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics. |
| dc.title |
Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide. |
| dc.type |
Journal Article |
| dc.contributor.school |
School of Electrical and Electronic Engineering |
| dc.identifier.doi |
http://dx.doi.org/10.1149/1.1736593 |
| dc.description.version |
Published version |
| dc.contributor.organization |
Singapore Institute of Manufacturing Technology |
