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Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide

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Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide

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dc.contributor.author Li, S.
dc.contributor.author Zhao, P.
dc.contributor.author Liu, Yang
dc.contributor.author Chen, Tupei
dc.contributor.author Ng, Chi Yung
dc.contributor.author Tse, Man Siu
dc.contributor.author Fung, Stevenson Hon Yuen
dc.contributor.author Liu, Yu Chan
dc.date.accessioned 2010-09-06T03:32:49Z
dc.date.available 2010-09-06T03:32:49Z
dc.date.copyright 2004
dc.date.issued 2010-09-06T03:32:49Z
dc.identifier.citation Li, S., Zhao, P., Liu, Y., Chen, T. P., Ng, C. Y., Tse, M. S., et al. (2004). Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide. Electrochemical and Solid State Letters, 7, G134-G137.
dc.identifier.issn 1099-0062
dc.identifier.uri http://hdl.handle.net/10220/6408
dc.description.abstract We report a study of influence of charging and discharging in Si nanocrystals (nc-Si), which are embedded throughout the gate oxide in metal-oxide-semiconductor (MOS) structures, on the current voltage and capacitance-voltage characteristics of the MOS structures. Very large current and capacitance are observed for the as-fabricated structures. However, charge trapping in the nanocrystals can reduce both the current and the capacitance dramatically. The trapped charges can also tunnel out from the nc-Si, leading to the recovery of both the current and the capacitance. The current reduction is attributed to the breaking of the nc-Si the change of the nc-Si capacitance as a result of the charge trapping.
dc.format.extent 4 p.
dc.language.iso en
dc.relation.ispartofseries Electrochemical and solid state letters
dc.rights Electrochemical and Solid State Letters © copyright 2004 Electrochemical Society. The journal's website is located at http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=ESLEF600000700000700G134000001&idtype=cvips&gifs=yes&ref=no
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
dc.title Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1149/1.1736593
dc.description.version Published version
dc.contributor.organization Singapore Institute of Manufacturing Technology

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