mirage

Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide.

DSpace/Manakin Repository

 

Search DR-NTU


Advanced Search Subject Search

Browse

My Account

Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide.

Show simple item record

dc.contributor.author Li, S.
dc.contributor.author Zhao, P.
dc.contributor.author Liu, Yang.
dc.contributor.author Chen, Tupei.
dc.contributor.author Ng, Chi Yung.
dc.contributor.author Tse, Man Siu.
dc.contributor.author Fung, Stevenson Hon Yuen.
dc.contributor.author Liu, Yu Chan.
dc.date.accessioned 2010-09-06T03:32:49Z
dc.date.available 2010-09-06T03:32:49Z
dc.date.copyright 2004
dc.date.issued 2010-09-06T03:32:49Z
dc.identifier.citation Li, S., Zhao, P., Liu, Y., Chen, T. P., Ng, C. Y., Tse, M. S., et al. (2004). Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide. Electrochemical and Solid State Letters, 7, G134-G137.
dc.identifier.issn 1099-0062
dc.identifier.uri http://hdl.handle.net/10220/6408
dc.description.abstract We report a study of influence of charging and discharging in Si nanocrystals (nc-Si), which are embedded throughout the gate oxide in metal-oxide-semiconductor (MOS) structures, on the current voltage and capacitance-voltage characteristics of the MOS structures. Very large current and capacitance are observed for the as-fabricated structures. However, charge trapping in the nanocrystals can reduce both the current and the capacitance dramatically. The trapped charges can also tunnel out from the nc-Si, leading to the recovery of both the current and the capacitance. The current reduction is attributed to the breaking of the nc-Si the change of the nc-Si capacitance as a result of the charge trapping.
dc.format.extent 4 p.
dc.language.iso en
dc.relation.ispartofseries Electrochemical and solid state letters
dc.rights Electrochemical and Solid State Letters © copyright 2004 Electrochemical Society. The journal's website is located at http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=ESLEF600000700000700G134000001&idtype=cvips&gifs=yes&ref=no
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics.
dc.title Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide.
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1149/1.1736593
dc.description.version Published version
dc.contributor.organization Singapore Institute of Manufacturing Technology

Files in this item

Files Size Format View
Charging effect ... ribution in gate oxide.pdf 620.3Kb PDF View/Open

This item appears in the following Collection(s)

Show simple item record

Statistics

Total views

All Items Views
Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide. 309

Total downloads

All Bitstreams Views
Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide.pdf 248

Top country downloads

Country Code Views
China 68
United States of America 62
Singapore 35
Russian Federation 14
Taiwan 8

Top city downloads

city Views
Mountain View 45
Singapore 35
Beijing 29
Ürümqi 6
Taipei 5