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Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing

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Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing

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Title: Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing
Author: Xu, C. D.; Mei, Ting; Nie, Dong; Dong, Jian Rong
Copyright year: 2006
Abstract: Inductively coupled argon plasma-enhanced intermixing of InAs/InP quantum dots grown on InP substrate is investigated. Intermixing is promoted by the near-surface defects generated by plasma exposure in annealing at a temperature of 600  degrees celcius for 30 s. The annealing results in a maximum differential band-gap blueshift of 106 nm but a thermal shift of only 10 nm. Band-gap halftones are obtained by controlling the amount of near-surface defects via wet chemical etching on the plasma-exposed InP cap layer. No degradation of quantum-dot crystal quality due to the process has been observed as evidenced by photoluminescence intensity.
Subject: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Type: Journal Article
Series/ Journal Title: Applied physics letters
School: School of Electrical and Electronic Engineering
Related Organization: Institute of Materials Research and Engineering
Rights: Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v89/i13/p131103_s1?isAuthorized=no
Version: Published version

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