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Title:
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Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing.
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Author:
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Xu, C. D.; Mei, Ting.; Nie, Dong.; Dong, Jian Rong.
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Copyright year:
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2006 |
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Abstract:
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Inductively coupled argon plasma-enhanced intermixing of InAs/InP quantum dots grown on InP substrate is investigated. Intermixing is promoted by the near-surface defects generated by plasma exposure in annealing at a temperature of 600 degrees celcius for 30 s. The annealing results in a maximum differential band-gap blueshift of 106 nm but a thermal shift of only 10 nm. Band-gap halftones are obtained by controlling the amount of near-surface defects via wet chemical etching on the plasma-exposed InP cap layer. No degradation of quantum-dot crystal quality due to the process has been observed as evidenced by photoluminescence intensity. |
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Subject:
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DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials. |
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Type:
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Journal Article |
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Series/ Journal Title:
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Applied physics letters |
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School:
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School of Electrical and Electronic Engineering |
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Related Organization:
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Institute of Materials Research and Engineering |
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Rights:
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Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v89/i13/p131103_s1?isAuthorized=no |
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Version:
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Published version |
