| dc.contributor.author |
Xu, C. D. |
| dc.contributor.author |
Mei, Ting. |
| dc.contributor.author |
Nie, Dong. |
| dc.contributor.author |
Dong, Jian Rong. |
| dc.date.accessioned |
2010-09-06T04:01:29Z |
| dc.date.available |
2010-09-06T04:01:29Z |
| dc.date.copyright |
2006 |
| dc.date.issued |
2010-09-06T04:01:29Z |
| dc.identifier.citation |
Xu, C. D., Mei, T., Nie, D., & Dong J. R. (2006). Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing. Applied Physics Letters, 89, 1-3. |
| dc.identifier.issn |
0003-6951 |
| dc.identifier.uri |
http://hdl.handle.net/10220/6409 |
| dc.description.abstract |
Inductively coupled argon plasma-enhanced intermixing of InAs/InP quantum dots grown on InP substrate is investigated. Intermixing is promoted by the near-surface defects generated by plasma exposure in annealing at a temperature of 600 degrees celcius for 30 s. The annealing results in a maximum differential band-gap blueshift of 106 nm but a thermal shift of only 10 nm. Band-gap halftones are obtained by controlling the amount of near-surface defects via wet chemical etching on the plasma-exposed InP cap layer. No degradation of quantum-dot crystal quality due to the process has been observed as evidenced by photoluminescence intensity. |
| dc.format.extent |
3 p. |
| dc.language.iso |
en |
| dc.relation.ispartofseries |
Applied physics letters |
| dc.rights |
Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v89/i13/p131103_s1?isAuthorized=no |
| dc.subject |
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials. |
| dc.title |
Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing. |
| dc.type |
Journal Article |
| dc.contributor.school |
School of Electrical and Electronic Engineering |
| dc.identifier.doi |
http://dx.doi.org/10.1063/1.2357563 |
| dc.description.version |
Published version |
| dc.contributor.organization |
Institute of Materials Research and Engineering |
