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Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing

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Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing

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dc.contributor.author Xu, C. D.
dc.contributor.author Mei, Ting
dc.contributor.author Nie, Dong
dc.contributor.author Dong, Jian Rong
dc.date.accessioned 2010-09-06T04:01:29Z
dc.date.available 2010-09-06T04:01:29Z
dc.date.copyright 2006
dc.date.issued 2010-09-06T04:01:29Z
dc.identifier.citation Xu, C. D., Mei, T., Nie, D., & Dong J. R. (2006). Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing. Applied Physics Letters, 89, 1-3.
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10220/6409
dc.description.abstract Inductively coupled argon plasma-enhanced intermixing of InAs/InP quantum dots grown on InP substrate is investigated. Intermixing is promoted by the near-surface defects generated by plasma exposure in annealing at a temperature of 600  degrees celcius for 30 s. The annealing results in a maximum differential band-gap blueshift of 106 nm but a thermal shift of only 10 nm. Band-gap halftones are obtained by controlling the amount of near-surface defects via wet chemical etching on the plasma-exposed InP cap layer. No degradation of quantum-dot crystal quality due to the process has been observed as evidenced by photoluminescence intensity.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Applied physics letters
dc.rights Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v89/i13/p131103_s1?isAuthorized=no
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
dc.title Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.2357563
dc.description.version Published version
dc.contributor.organization Institute of Materials Research and Engineering

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