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Room-temperature visible electroluminescence from aluminum nitride thin film embedded with aluminum nanocrystals

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Room-temperature visible electroluminescence from aluminum nitride thin film embedded with aluminum nanocrystals

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dc.contributor.author Yang, Ming
dc.contributor.author Liu, Yang
dc.contributor.author Ding, Liang
dc.contributor.author Wong, Jen It
dc.contributor.author Liu, Zhen
dc.contributor.author Zhang, Sam
dc.contributor.author Zhang, Wali
dc.contributor.author Zhu, Fu Rong
dc.contributor.author Chen, Tupei
dc.date.accessioned 2010-09-06T04:10:05Z
dc.date.available 2010-09-06T04:10:05Z
dc.date.copyright 2008
dc.date.issued 2010-09-06T04:10:05Z
dc.identifier.citation Yang, M., Liu, Y., Ding, L., Wong, J. I., Liu, Z., & Zhang, S., et al. (2008). Room-temperature visible electroluminescence from aluminum nitride thin film embedded with aluminum nanocrystals. IEEE Transactions on Electron Devices, 55(12), 3605-3609.
dc.identifier.issn 0018-9383
dc.identifier.uri http://hdl.handle.net/10220/6410
dc.description.abstract In this brief, room-temperature visible electroluminescence (EL) from aluminum nitride (AlN) thin films containing aluminum nanocrystals (nc-Al) prepared by a radio-frequency magnetron sputtering technique is reported. The EL shows a broad spectrum peaked at 565 nm (2.19 eV) when a negative gate voltage is applied. A linear relationship between the EL and the current transport in the nc-Al/AlN thin film system is observed, and both the current transport and the EL intensity exhibit a power-law dependence on the gate voltage. These results are explained in terms of the formation of percolation networks of tunneling paths by the nc-Al arrays and the radiative recombination of the injected electrons and holes via the deep-level defects at the locations of nc-Al along the tunneling paths.
dc.format.extent 5 p.
dc.language.iso en
dc.relation.ispartofseries IEEE transactions on electron devices
dc.rights © 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site..
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics.
dc.title Room-temperature visible electroluminescence from aluminum nitride thin film embedded with aluminum nanocrystals
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1109/TED.2008.2006531
dc.description.version Published version

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