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Title: | Charging effect on current conduction in aluminum nitride thin films containing Al nanocrystals | Authors: | Liu, Yang Chen, Tupei Lau, Hon Wu Wong, Jen It Ding, Liang Zhang, Sam Fung, Stevenson Hon Yuen |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics | Issue Date: | 2006 | Source: | Liu, Y., Chen, T., Lau, H. W., Wong, J. I., Ding, L., Zhang, S., et al. (2006). Charging effect on current conduction in aluminum nitride thin films containing Al nanocrystals. Applied physics letters, 89, 1-3. | Series/Report no.: | Applied physics letters | Abstract: | The presence of Al nanocrystals (nc-Al) in AlN thin films is found to enhance the current conduction of the thin film system greatly due to the formation of tunneling paths of nc-Al arrays, and the nc-Al/AlN system shows a quasi-two-dimensional transport following a power law. However, charge trapping in nc-Al reduces the current conduction because of the increase in the tunneling resistance and/or the breaking of some tunneling paths due to Coulomb blockade effect. The current conduction also evolves with a trend towards one-dimensional transport due to the breaking of some transverse tunneling paths as a result of the charge trapping. | URI: | https://hdl.handle.net/10356/101045 http://hdl.handle.net/10220/6411 |
ISSN: | 0003-6951 | DOI: | 10.1063/1.2354418 | Schools: | School of Electrical and Electronic Engineering | Rights: | Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v89/i12/p123101_s1?isAuthorized=no | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Journal Articles |
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Charging effect on current conduction in aluminum nitride thin films containing Al nanocrystals.pdf | 245.1 kB | Adobe PDF | View/Open |
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