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Charging effect on current conduction in aluminum nitride thin films containing Al nanocrystals

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Charging effect on current conduction in aluminum nitride thin films containing Al nanocrystals

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dc.contributor.author Liu, Yang
dc.contributor.author Chen, Tupei
dc.contributor.author Lau, Hon Wu
dc.contributor.author Wong, Jen It
dc.contributor.author Ding, Liang
dc.contributor.author Zhang, Sam
dc.contributor.author Fung, Stevenson Hon Yuen
dc.date.accessioned 2010-09-07T01:04:59Z
dc.date.available 2010-09-07T01:04:59Z
dc.date.copyright 2006
dc.date.issued 2010-09-07T01:04:59Z
dc.identifier.citation Liu, Y., Chen, T., Lau, H. W., Wong, J. I., Ding, L., Zhang, S., et al. (2006). Charging effect on current conduction in aluminum nitride thin films containing Al nanocrystals. Applied physics letters, 89, 1-3.
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10220/6411
dc.description.abstract The presence of Al nanocrystals (nc-Al) in AlN thin films is found to enhance the current conduction of the thin film system greatly due to the formation of tunneling paths of nc-Al arrays, and the nc-Al/AlN system shows a quasi-two-dimensional transport following a power law. However, charge trapping in nc-Al reduces the current conduction because of the increase in the tunneling resistance and/or the breaking of some tunneling paths due to Coulomb blockade effect. The current conduction also evolves with a trend towards one-dimensional transport due to the breaking of some transverse tunneling paths as a result of the charge trapping.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Applied physics letters
dc.rights Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v89/i12/p123101_s1?isAuthorized=no
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics.
dc.title Charging effect on current conduction in aluminum nitride thin films containing Al nanocrystals
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.2354418
dc.description.version Published version

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