| dc.contributor.author |
Liu, Yang. |
| dc.contributor.author |
Chen, Tupei. |
| dc.contributor.author |
Lau, H. W. |
| dc.contributor.author |
Wong, Jen It. |
| dc.contributor.author |
Ding, Liang. |
| dc.contributor.author |
Zhang, Sam. |
| dc.contributor.author |
Fung, Stevenson Hon Yuen. |
| dc.date.accessioned |
2010-09-07T01:04:59Z |
| dc.date.available |
2010-09-07T01:04:59Z |
| dc.date.copyright |
2006 |
| dc.date.issued |
2010-09-07T01:04:59Z |
| dc.identifier.citation |
Liu, Y., Chen, T., Lau, H. W., Wong, J. I., Ding, L., Zhang, S., et al. (2006). Charging effect on current conduction in aluminum nitride thin films containing Al nanocrystals. Applied Physics Letters, 89, 1-3. |
| dc.identifier.issn |
0003-6951 |
| dc.identifier.uri |
http://hdl.handle.net/10220/6411 |
| dc.description.abstract |
The presence of Al nanocrystals (nc-Al) in AlN thin films is found to enhance the current conduction of the thin film system greatly due to the formation of tunneling paths of nc-Al arrays, and the nc-Al/AlN system shows a quasi-two-dimensional transport following a power law. However, charge trapping in nc-Al reduces the current conduction because of the increase in the tunneling resistance and/or the breaking of some tunneling paths due to Coulomb blockade effect. The current conduction also evolves with a trend towards one-dimensional transport due to the breaking of some transverse tunneling paths as a result of the charge trapping. |
| dc.format.extent |
3 p. |
| dc.language.iso |
en |
| dc.relation.ispartofseries |
Applied physics letters |
| dc.rights |
Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v89/i12/p123101_s1?isAuthorized=no |
| dc.subject |
DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics. |
| dc.title |
Charging effect on current conduction in aluminum nitride thin films containing Al nanocrystals. |
| dc.type |
Journal Article |
| dc.contributor.school |
School of Electrical and Electronic Engineering |
| dc.identifier.doi |
http://dx.doi.org/10.1063/1.2354418 |
| dc.description.version |
Published version |
