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Charging effect on current conduction in aluminum nitride thin films containing Al nanocrystals.

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Charging effect on current conduction in aluminum nitride thin films containing Al nanocrystals.

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dc.contributor.author Liu, Yang.
dc.contributor.author Chen, Tupei.
dc.contributor.author Lau, Hon Wu.
dc.contributor.author Wong, Jen It.
dc.contributor.author Ding, Liang.
dc.contributor.author Zhang, Sam.
dc.contributor.author Fung, Stevenson Hon Yuen.
dc.date.accessioned 2010-09-07T01:04:59Z
dc.date.available 2010-09-07T01:04:59Z
dc.date.copyright 2006
dc.date.issued 2010-09-07T01:04:59Z
dc.identifier.citation Liu, Y., Chen, T., Lau, H. W., Wong, J. I., Ding, L., Zhang, S., et al. (2006). Charging effect on current conduction in aluminum nitride thin films containing Al nanocrystals. Applied physics letters, 89, 1-3.
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10220/6411
dc.description.abstract The presence of Al nanocrystals (nc-Al) in AlN thin films is found to enhance the current conduction of the thin film system greatly due to the formation of tunneling paths of nc-Al arrays, and the nc-Al/AlN system shows a quasi-two-dimensional transport following a power law. However, charge trapping in nc-Al reduces the current conduction because of the increase in the tunneling resistance and/or the breaking of some tunneling paths due to Coulomb blockade effect. The current conduction also evolves with a trend towards one-dimensional transport due to the breaking of some transverse tunneling paths as a result of the charge trapping.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Applied physics letters
dc.rights Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v89/i12/p123101_s1?isAuthorized=no
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics.
dc.title Charging effect on current conduction in aluminum nitride thin films containing Al nanocrystals.
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.2354418
dc.description.version Published version

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