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Profile of optical constants of SiO2 thin films containing Si nanocrystals

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Profile of optical constants of SiO2 thin films containing Si nanocrystals

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dc.contributor.author Dong, Gui
dc.contributor.author Chen, Tupei
dc.contributor.author Liu, Yang
dc.contributor.author Tse, Man Siu
dc.contributor.author Fung, Stevenson Hon Yuen
dc.date.accessioned 2010-09-07T01:38:07Z
dc.date.available 2010-09-07T01:38:07Z
dc.date.copyright 2004
dc.date.issued 2010-09-07T01:38:07Z
dc.identifier.citation Dong, G., Chen, T. P., Liu, Y., Tse, M. S., & Fung, S. H. Y. (2004). Profile of optical constants of SiO2 thin films containing Si nanocrystals. Journal of Applied Physics, 95(12), 8481-8483.
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10220/6412
dc.description.abstract For optoelectronic and photonic applications of Si nanocrystals (nc-Si) embedded in a SiO2 matrix, the information of the depth profiles of the optical constants for the thin film system is necessary. In this work, an approach of the depth profiling for the thin film synthesized with ion implantation is developed. In this approach, the nc-Si depth distribution obtained from secondary ion mass spectroscopy measurement is modeled with the approximation of many sublayers, and for a given wavelength the optical constants of each sublayer are formulated with the nc-Si volume fraction in the sublayer and the nc-Si optical constants as variables based on the effective medium approximation. After the above procedures the nc-Si optical constants are obtained from the spectral ellipsometric fittings. Finally the optical constants of each sublayer are calculated, and thus the depth profiles of the optical constants for the SiO2 thin film containing the nc-Si are obtained.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Journal of applied physics
dc.rights Journal of Applied Physics © copyright 2004 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v95/i12/p8481_s1?isAuthorized=no
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
dc.title Profile of optical constants of SiO2 thin films containing Si nanocrystals
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.1739282
dc.description.version Published version
dc.contributor.organization Institute of Microelectronics

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