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Fourier transform-based k∙p method of semiconductor superlattice electronic structure.

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Fourier transform-based k∙p method of semiconductor superlattice electronic structure.

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dc.contributor.author Mei, Ting.
dc.date.accessioned 2010-09-07T04:17:34Z
dc.date.available 2010-09-07T04:17:34Z
dc.date.copyright 2007
dc.date.issued 2010-09-07T04:17:34Z
dc.identifier.citation Mei, T. (2007). Fourier transform-based k∙p method of semiconductor superlattice electronic structure. Journal of Applied Physics, 102, 1-5.
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10220/6416
dc.description.abstract With the periodic spatial domain Hamiltonian being expressed as a Fourier series, a simple and neat Hamiltonian in a Fourier domain is formulated. The Fourier transform-based k⋅p approach is developed to calculate electronic structures of semiconductor heterostructures. Calculation of electronic structures is investigated with several quantum well examples and comparison is made between this approach and the finite difference approach. The formulation of the Fourier domain Hamiltonian for quantum dots is presented as well.
dc.format.extent 5 p.
dc.language.iso en
dc.relation.ispartofseries Journal of applied physics
dc.rights Journal of Applied Physics © copyright 2007 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v102/i5/p053708_s1?isAuthorized=no
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Semiconductors.
dc.title Fourier transform-based k∙p method of semiconductor superlattice electronic structure.
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.2776158
dc.description.version Published version

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