Built-in electric field enhancement/retardation on intermixing

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Built-in electric field enhancement/retardation on intermixing

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dc.contributor.author Xu, C. D.
dc.contributor.author Chin, Mee Koy
dc.contributor.author Mei, Ting
dc.contributor.author Dong, Jian Rong
dc.contributor.author Chua, Soo Jin
dc.date.accessioned 2010-09-07T04:32:00Z
dc.date.available 2010-09-07T04:32:00Z
dc.date.copyright 2007
dc.date.issued 2010-09-07T04:32:00Z
dc.identifier.citation Xu, C. D., Chin, M. K., Mei, T., Dong, J. R., & Chua, S. J. (2007). Built-in electric field enhancement/retardation on intermixing. Applied physics letters, 91, 1-3.
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10220/6417
dc.description.abstract The built-in electric field may impose a drift on charged point defects and may thus enhance or retard the intermixing during annealing. Electric field is built-in near the surface due to the pinning of surface Fermi level after argon plasma treatment on InP surfaces of InP/InGaAs quantum well samples. Subsequent annealing leads to different intermixing results due to the different field directions on InP cap layers in different doping types. Experiments also showed different influences of the built-in field on the two sublattices largely due to different charge numbers of point defects on the respective sublattices.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Applied physics letters
dc.rights Applied Physics Letters © copyright 2007. The journal's website is located at http://apl.aip.org/applab/v91/i18/p181111_s1?isAuthorized=no
dc.subject DRNTU::Engineering::Electrical and electronic engineering
dc.title Built-in electric field enhancement/retardation on intermixing
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.2805018
dc.description.version Published version
dc.contributor.organization Institute of Materials Research and Engineering

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