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Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure

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Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure

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Title: Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure
Author: Mei, Ting; Tang, Xiao Hong; Wang, Yixin; Djie, Hery Susanto; Chin, Mee Koy; Nie, Dong
Copyright year: 2006
Abstract: Intermixing in an undoped InGaAsP/InP quantum well structure enhanced by near-surface defects generated using inductively coupled argon plasma is temperature dependent. The group III sublattice interdiffusion can be four times as fast as that of the group V sublattice for the annealing temperature lower than 600  degrees celcius, and a maximum band gap redshift of 50 nm is obtained in experiment. Blueshift is obtained at 700 degrees celcius when the group V sublattice interdiffusion becomes appreciable.
Subject: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials.
Type: Journal Article
Series/ Journal Title: Journal of applied physics
School: School of Electrical and Electronic Engineering
Related Organization: Institute for InfoCommunication Research
Rights: Journal of Applied Physics © copyright 2006 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v100/i4/p046103_s1?isAuthorized=no
Version: Published version

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