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Title:
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Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure.
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Author:
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Mei, Ting.; Tang, Xiao Hong.; Wang, Yixin.; Djie, Hery Susanto.; Chin, M. K.; Nie, Dong.
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Copyright year:
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2006 |
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Abstract:
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Intermixing in an undoped InGaAsP/InP quantum well structure enhanced by near-surface defects generated using inductively coupled argon plasma is temperature dependent. The group III sublattice interdiffusion can be four times as fast as that of the group V sublattice for the annealing temperature lower than 600 degrees celcius, and a maximum band gap redshift of 50 nm is obtained in experiment. Blueshift is obtained at 700 degrees celcius when the group V sublattice interdiffusion becomes appreciable. |
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Subject:
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DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials. |
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Type:
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Journal Article |
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Series/ Journal Title:
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Journal of applied physics |
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School:
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School of Electrical and Electronic Engineering |
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Related Organization:
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Institute for InfoCommunication Research |
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Rights:
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Journal of Applied Physics © copyright 2006 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v100/i4/p046103_s1?isAuthorized=no |
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Version:
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Published version |
