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Plasma-induced quantum well intermixing for monolithic photonic integration

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Plasma-induced quantum well intermixing for monolithic photonic integration

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dc.contributor.author Djie, Hery Susanto
dc.contributor.author Mei, Ting
dc.date.accessioned 2010-09-07T06:08:23Z
dc.date.available 2010-09-07T06:08:23Z
dc.date.copyright 2005
dc.date.issued 2010-09-07T06:08:23Z
dc.identifier.citation Djie, H. S., & Mei, T. (2005). Plasma-induced quantum well intermixing for monolithic photonic integration. IEEE Journal of Selected Topics in Quantum Electronics, 11(2), 373-382.
dc.identifier.issn 1077-260X
dc.identifier.uri http://hdl.handle.net/10220/6420
dc.description.abstract Plasma-induced quantum well intermixing (QWI) has been developed for tuning the bandgap of III-V compound semiconductor materials using an inductively coupled plasma system at the postgrowth level. In this paper, we present the capability of the technique for a high-density photonic integration process, which offers three aspects of investigation: 1) universality to a wide range of III-V compound material systems covering the wavelength range from 700 to 1600 nm; 2) spatial resolution of the process; and 3) single-step multiple bandgap creation. To verify the monolithic integration capability, a simple photonic integrated chip has been fabricated using Ar plasma-induced QWI in the form of a two-section extended cavity laser diode, where an active laser is integrated with an intermixed low-loss waveguide.
dc.format.extent 10 p.
dc.language.iso en
dc.relation.ispartofseries IEEE journal of selected topics in quantum electronics
dc.rights © 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
dc.title Plasma-induced quantum well intermixing for monolithic photonic integration
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1109/JSTQE.2005.845611
dc.description.version Published version

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