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Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions.

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Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions.

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Title: Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions.
Author: Cen, Zhan Hong.; Chen, Tupei.; Ding, Liang.; Liu, Yang.; Wong, Jen It.; Yang, Ming.; Liu, Zhen.; Goh, Wei Peng.; Zhu, Fu Rong.; Fung, Stevenson Hon Yuen.
Copyright year: 2009
Abstract: Strong visible electroluminescence (EL) has been observed from a 30 nm silicon nitride thin film multiply implanted with Si ions and annealed at 1100  degree celcius. The EL intensity shows a linear relationship with the current transport in the thin film at lower voltages, but a departure from the linear relationship with a quenching in the EL intensity is observed at higher voltages. The EL spectra show two primary EL bands including the predominant violet band at ∼ 3.0 eV (415 nm) and the strong green-yellow band at ∼ 2.2 eV (560 nm). Two weak bands including the ultraviolet band at ∼ 3.8 eV and the near infrared band at ∼ 1.45 eV emerge at high voltages. The evolution of each EL band with the voltage has been examined. The phenomena observed are explained, and the EL mechanisms are discussed.
Subject: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials.
Type: Journal Article
Series/ Journal Title: Applied physics letters
School: School of Electrical and Electronic Engineering
Related Organization: Institute of Materials Research and Engineering
Rights: Applied Physics Letters © copyright 2009 American Institute of Physics. This journal's website is located at http://apl.aip.org/applab/v94/i4/p041102_s1?isAuthorized=no.
Version: Published version

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