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https://hdl.handle.net/10356/90509
Title: | Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions | Authors: | Ding, Liang Liu, Yang Chen, Tupei Cen, Zhan Hong Wong, Jen It Yang, Ming Liu, Zhen Goh, Wei Peng Zhu, Fu Rong Fung, Stevenson Hon Yuen |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials | Issue Date: | 2009 | Source: | Cen, Z. H., Chen, T. P., Ding, L., Liu, Y., Wong, J. I., Yang, M., et al. (2009). Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions. Applied Physics Letters, 94, 1-3. | Series/Report no.: | Applied physics letters | Abstract: | Strong visible electroluminescence (EL) has been observed from a 30 nm silicon nitride thin film multiply implanted with Si ions and annealed at 1100 degree celcius. The EL intensity shows a linear relationship with the current transport in the thin film at lower voltages, but a departure from the linear relationship with a quenching in the EL intensity is observed at higher voltages. The EL spectra show two primary EL bands including the predominant violet band at ∼ 3.0 eV (415 nm) and the strong green-yellow band at ∼ 2.2 eV (560 nm). Two weak bands including the ultraviolet band at ∼ 3.8 eV and the near infrared band at ∼ 1.45 eV emerge at high voltages. The evolution of each EL band with the voltage has been examined. The phenomena observed are explained, and the EL mechanisms are discussed. | URI: | https://hdl.handle.net/10356/90509 http://hdl.handle.net/10220/6423 |
ISSN: | 0003-6951 | DOI: | 10.1063/1.3068002 | Schools: | School of Electrical and Electronic Engineering | Organisations: | A*STAR Institute of Materials Research and Engineering | Rights: | Applied Physics Letters © copyright 2009 American Institute of Physics. This journal's website is located at http://apl.aip.org/applab/v94/i4/p041102_s1?isAuthorized=no. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Journal Articles |
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