| dc.contributor.author |
Ding, Liang. |
| dc.contributor.author |
Chen, Tupei. |
| dc.contributor.author |
Yang, Ming. |
| dc.contributor.author |
Wong, Jen It. |
| dc.contributor.author |
Liu, Yang. |
| dc.contributor.author |
Yu, Siu Fung. |
| dc.contributor.author |
Zhu, Fu Rong. |
| dc.contributor.author |
Tan, M. C. |
| dc.contributor.author |
Fung, Stevenson Hon Yuen. |
| dc.contributor.author |
Tung, Chih Hang. |
| dc.contributor.author |
Trigg, Alastair David. |
| dc.date.accessioned |
2010-09-07T07:25:54Z |
| dc.date.available |
2010-09-07T07:25:54Z |
| dc.date.copyright |
2007 |
| dc.date.issued |
2010-09-07T07:25:54Z |
| dc.identifier.citation |
Ding, L., Chen, T. P., Yang, M., Wong, J. I., Liu, Y., Yu, S. F., et al (2007). Photon-induced conduction modulation in SiO2 thin films embedded with Ge nanocrystals. Applied Physics Letters, 90, 1-3. |
| dc.identifier.issn |
0003-6951 |
| dc.identifier.uri |
http://hdl.handle.net/10220/6424 |
| dc.description.abstract |
The authors report the photon-induced conduction modulation in SiO2 thin films embedded with germanium nanocrystals (nc-Ge). The conduction of the oxide could be switched to a higher- or lower-conductance state by a ultraviolet (UV) illumination. The conduction modulation is caused by charging and discharging in the nc-Ge due to the UV illumination. If the charging process is dominant, the oxide conductance is reduced; however, if the discharging process is dominant, the oxide conductance is increased. As the conduction can be modulated by UV illumination, it could have potential applications in silicon-based optical memory devices. |
| dc.format.extent |
3 p. |
| dc.language.iso |
en |
| dc.relation.ispartofseries |
Applied physics letters |
| dc.rights |
Applied Physics Letters © copyright 2007 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v90/i10/p103102_s1?isAuthorized=no |
| dc.subject |
DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics. |
| dc.title |
Photon-induced conduction modulation in SiO2 thin films embedded with Ge nanocrystals. |
| dc.type |
Journal Article |
| dc.contributor.school |
School of Electrical and Electronic Engineering |
| dc.identifier.doi |
http://dx.doi.org/10.1063/1.2711198 |
| dc.description.version |
Published version |
| dc.contributor.organization |
Institute of Materials Research and Engineering |
| dc.contributor.organization |
Institute of Microelectronics |
