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Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure.

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Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure.

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Title: Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure.
Author: Liu, Yang.; Chen, Tupei.; Ding, Liang.; Yang, Ming.; Wong, Jen It.; Ng, Chi Yung.; Yu, Siu Fung.; Li, Zeng Xiang.; Yuen, Chau.; Zhu, Fu Rong.; Tan, M. C.; Fung, Stevenson Hon Yuen.
Copyright year: 2007
Abstract: We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm SiO2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p-type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices.
Subject: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics.
Type: Journal Article
Series/ Journal Title: Journal of applied physics
Rights: Journal of Applied Physics © copyright 2007 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v101/i10/p104306_s1?isAuthorized=no
Version: Published version

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