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Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure.

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Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure.

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dc.contributor.author Liu, Yang.
dc.contributor.author Chen, Tupei.
dc.contributor.author Ding, Liang.
dc.contributor.author Yang, Ming.
dc.contributor.author Wong, Jen It.
dc.contributor.author Ng, Chi Yung.
dc.contributor.author Yu, Siu Fung.
dc.contributor.author Li, Zeng Xiang.
dc.contributor.author Yuen, Chau.
dc.contributor.author Zhu, Fu Rong.
dc.contributor.author Tan, M. C.
dc.contributor.author Fung, Stevenson Hon Yuen.
dc.date.accessioned 2010-09-07T07:46:31Z
dc.date.available 2010-09-07T07:46:31Z
dc.date.copyright 2007
dc.date.issued 2010-09-07T07:46:31Z
dc.identifier.citation Liu, Y., Chen, T. P., Ding, L., Yang, M., Wong, J. I., Ng, C. Y., et al. (2007). Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure. Journal of applied physics, 101, 1-4.
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10220/6425
dc.description.abstract We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm SiO2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p-type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices.
dc.format.extent 4 p.
dc.language.iso en
dc.relation.ispartofseries Journal of applied physics
dc.rights Journal of Applied Physics © copyright 2007 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v101/i10/p104306_s1?isAuthorized=no
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics.
dc.title Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure.
dc.type Journal Article
dc.identifier.doi http://dx.doi.org/10.1063/1.2713946
dc.description.version Published version

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