mirage

Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure

DSpace/Manakin Repository

 

Search DR-NTU


Advanced Search Subject Search

Browse

My Account

Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure

Show simple item record

dc.contributor.author Liu, Yang
dc.contributor.author Chen, Tupei
dc.contributor.author Ding, Liang
dc.contributor.author Yang, Ming
dc.contributor.author Wong, Jen It
dc.contributor.author Ng, Chi Yung
dc.contributor.author Yu, Siu Fung
dc.contributor.author Li, Zeng Xiang
dc.contributor.author Yuen, Chau
dc.contributor.author Zhu, Fu Rong
dc.contributor.author Tan, M. C.
dc.contributor.author Fung, Stevenson Hon Yuen
dc.date.accessioned 2010-09-07T07:46:31Z
dc.date.available 2010-09-07T07:46:31Z
dc.date.copyright 2007
dc.date.issued 2010-09-07T07:46:31Z
dc.identifier.citation Liu, Y., Chen, T. P., Ding, L., Yang, M., Wong, J. I., Ng, C. Y., et al. (2007). Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure. Journal of applied physics, 101, 1-4.
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10220/6425
dc.description.abstract We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm SiO2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p-type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices.
dc.format.extent 4 p.
dc.language.iso en
dc.relation.ispartofseries Journal of applied physics
dc.rights Journal of Applied Physics © copyright 2007 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v101/i10/p104306_s1?isAuthorized=no
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics.
dc.title Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure
dc.type Journal Article
dc.identifier.doi http://dx.doi.org/10.1063/1.2713946
dc.description.version Published version

Files in this item

Files Size Format View
Influence of ch ... ght emitting structure.pdf 205.1Kb PDF View/Open

This item appears in the following Collection(s)

Show simple item record

Statistics

Total views

All Items Views
Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure 291

Total downloads

All Bitstreams Views
Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure.pdf 190

Top country downloads

Country Code Views
China 71
United States of America 56
Singapore 26
Russian Federation 6
Unknown Country 5

Top city downloads

city Views
Beijing 52
Mountain View 35
Singapore 26
Jacksonville 10
Redmond 2