| dc.contributor.author |
Liu, Yang. |
| dc.contributor.author |
Chen, Tupei. |
| dc.contributor.author |
Ding, Liang. |
| dc.contributor.author |
Yang, Ming. |
| dc.contributor.author |
Wong, Jen It. |
| dc.contributor.author |
Ng, Chi Yung. |
| dc.contributor.author |
Yu, Siu Fung. |
| dc.contributor.author |
Li, Zeng Xiang. |
| dc.contributor.author |
Yuen, C. |
| dc.contributor.author |
Zhu, Fu Rong. |
| dc.contributor.author |
Tan, M. C. |
| dc.contributor.author |
Fung, Stevenson Hon Yuen. |
| dc.date.accessioned |
2010-09-07T07:46:31Z |
| dc.date.available |
2010-09-07T07:46:31Z |
| dc.date.copyright |
2007 |
| dc.date.issued |
2010-09-07T07:46:31Z |
| dc.identifier.citation |
Liu, Y., Chen, T. P., Ding, L., Yang, M., Wong, J. I., Ng, C. Y., et al. (2007). Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure. Journal of Applied Physics, 101, 1-4. |
| dc.identifier.issn |
0021-8979 |
| dc.identifier.uri |
http://hdl.handle.net/10220/6425 |
| dc.description.abstract |
We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm SiO2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p-type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices. |
| dc.format.extent |
4 p. |
| dc.language.iso |
en |
| dc.relation.ispartofseries |
Journal of applied physics |
| dc.rights |
Journal of Applied Physics © copyright 2007 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v101/i10/p104306_s1?isAuthorized=no |
| dc.subject |
DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics. |
| dc.title |
Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure. |
| dc.type |
Journal Article |
| dc.identifier.doi |
http://dx.doi.org/10.1063/1.2713946 |
| dc.description.version |
Published version |
