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Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams

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Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams

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Title: Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams
Author: Ng, Chi Yung; Chen, Tupei; Zhao, P.; Ding, Liang; Liu, Yang; Tseng, Ampere A.; Fung, Stevenson Hon Yuen
Copyright year: 2006
Abstract: A nanocrystal Si (nc-Si) distributed in a narrow layer in the gate oxide close to the gate is synthesized with Si ion implantation at 2 keV, and the electrical characteristics of the nc-Si structure are investigated. The onset voltage of the Fowler-Nordheim tunneling of the structure is lower than that of pure SiO2 structure, and it decreases with the nc-Si concentration. The phenomenon is attributed to the reduction of the effective thickness of the tunneling oxide. The application of a positive or negative voltage causes electron or hole trapping in the nc-Si, leading to a positive or negative flatband voltage shift, respectively. A steplike flatband voltage shift as a function of charging voltage is observed, suggesting single electron or hole trapping in the nc-Si at room temperature. On the other hand, the nc-Si structure shows good charge-retention characteristics also.
Subject: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Type: Journal Article
Series/ Journal Title: Journal of applied physics
School: School of Electrical and Electronic Engineering
Rights: Journal of Applied Physics © copyright 2006 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v99/i10/p106105_s1?isAuthorized=no
Version: Published version

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