mirage

Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals

DSpace/Manakin Repository

 

Search DR-NTU


Advanced Search Subject Search

Browse

My Account

Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals

Show simple item record

dc.contributor.author Ng, Chi Yung
dc.contributor.author Chen, Tupei
dc.contributor.author Yang, Ming
dc.contributor.author Yang, Jian Bo
dc.contributor.author Ding, Liang
dc.contributor.author Li, Chang Ming
dc.contributor.author Du, A.
dc.contributor.author Trigg, Alastair David
dc.date.accessioned 2010-09-07T08:27:13Z
dc.date.available 2010-09-07T08:27:13Z
dc.date.copyright 2006
dc.date.issued 2010-09-07T08:27:13Z
dc.identifier.citation Ng, C. Y., Chen, T. P., Yang, M., Yang, J. B., Ding, L., Li, C. M., et al. (2006). Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals. IEEE Transactions on Electron Devices, 53(4), 663-667.
dc.identifier.issn 0018-9383
dc.identifier.uri http://hdl.handle.net/10220/6427
dc.description.abstract A nonvolatile memory based on silicon nanocrystals (nc-Si) synthesized with very-low-energy Si+ implantation is fabricated, and the memory performance under the programming/erasing of either Fowler-Nordheim (FN)/FN or channel hot electron (CHE)/FN at both room temperature and 85°C is investigated. The CHE programming has a larger memory window, a better endurance, and a longer retention time as compared to FN programming. In addition, the CHE programming yields less stress-induced leakage current than FN programming, suggesting that it produces less damage to the gate oxide and the oxide/Si interface. Detailed discussions on the impact of the programming mechanisms are presented.
dc.format.extent 5 p.
dc.language.iso en
dc.relation.ispartofseries IEEE transactions on electron devices
dc.rights © 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics.
dc.title Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1109/TED.2006.870281
dc.description.version Published version
dc.contributor.organization Institute of Microelectronics

Files in this item

Files Size Format View
Impact of progr ... sed on Si nanocrystals.pdf 257.5Kb PDF View/Open

This item appears in the following Collection(s)

Show simple item record

Statistics

Total views

All Items Views
Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals 302

Total downloads

All Bitstreams Views
Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals.pdf 171

Top country downloads

Country Code Views
United States of America 60
Singapore 36
China 31
Russian Federation 6
Germany 3

Top city downloads

city Views
Mountain View 42
Singapore 36
Beijing 13
Shenzhen 4
Heide 2