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Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures.

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Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures.

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Title: Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures.
Author: Gui, D.; Ng, Chi Yung.; Chen, Tupei.; Liu, Yang.; Tse, Man Siu.
Copyright year: 2005
Abstract: In this work, charge trapping in silicon nanocrystals (nc-Si) distributed throughout the gate oxide in a metal oxide semiconductor (MOS) structure has been studied. This situation is different from the conventional one with nc-Si confined in a narrow layer embedded in the gate oxide. In the latter, charge trapping in nc-Si leads to a shift in capacitance-voltage characteristic (i.e., a change in the flat-band voltage). In contrast, in the former the charge trapping leads to a dramatic reduction in the MOS capacitance. The original capacitance could be recovered after the release of the trapped charges by a small bias, UV light illumination, or low-temperature thermal annealing.
Subject: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics.
Type: Journal Article
Series/ Journal Title: Electrochemical and solid state letters
School: School of Electrical and Electronic Engineering
Related Organization: Institute of Microelectronics
Rights: Electrochemical and Solid State Letters © copyright 2005 Electrochemical Society. The journal's website is located at http://dx.doi.org.ezlibproxy1.ntu.edu.sg/10.1149/1.1830392
Version: Published version

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