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Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures

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Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures

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dc.contributor.author Gui, D.
dc.contributor.author Ng, Chi Yung
dc.contributor.author Chen, Tupei
dc.contributor.author Liu, Yang
dc.contributor.author Tse, Man Siu
dc.date.accessioned 2010-09-07T08:39:30Z
dc.date.available 2010-09-07T08:39:30Z
dc.date.copyright 2005
dc.date.issued 2010-09-07T08:39:30Z
dc.identifier.citation Gui, D., Ng, C. Y., Chen, T. P., Liu, Y., & Tse, M. S. (2005). Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures. Electrochemical and Solid State Letters, 8(1), G8-G10.
dc.identifier.issn 1099-0062
dc.identifier.uri http://hdl.handle.net/10220/6428
dc.description.abstract In this work, charge trapping in silicon nanocrystals (nc-Si) distributed throughout the gate oxide in a metal oxide semiconductor (MOS) structure has been studied. This situation is different from the conventional one with nc-Si confined in a narrow layer embedded in the gate oxide. In the latter, charge trapping in nc-Si leads to a shift in capacitance-voltage characteristic (i.e., a change in the flat-band voltage). In contrast, in the former the charge trapping leads to a dramatic reduction in the MOS capacitance. The original capacitance could be recovered after the release of the trapped charges by a small bias, UV light illumination, or low-temperature thermal annealing.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Electrochemical and solid state letters
dc.rights Electrochemical and Solid State Letters © copyright 2005 Electrochemical Society. The journal's website is located at http://dx.doi.org.ezlibproxy1.ntu.edu.sg/10.1149/1.1830392
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
dc.title Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1149/1.1830392
dc.description.version Published version
dc.contributor.organization Institute of Microelectronics

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