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Tight binding description on the band gap opening of pyrene-dispersed graphene

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Tight binding description on the band gap opening of pyrene-dispersed graphene

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dc.contributor.author Chen, Dongmeng
dc.contributor.author Shenai, Prathamesh Mahesh
dc.contributor.author Zhao, Yang
dc.date.accessioned 2011-03-03T08:03:09Z
dc.date.available 2011-03-03T08:03:09Z
dc.date.copyright 2011
dc.date.issued 2011-03-03T08:03:09Z
dc.identifier.citation Chen, D. M., Shenai, P. M., & Zhao, Y. (2011). Tight Binding Description on Band Gap Opening of Pyrene-dispersed Graphene. Physical Chemistry Chemical Physics, 13, 1515-1520.
dc.identifier.uri http://hdl.handle.net/10220/6735
dc.description.abstract Opening up a band gap in graphene holds a crucial significance in the realization of graphene based electronics. Doping with organic molecules to alter the electronic properties of graphene is perceived as an effective band gap engineering approach. Using the tight binding model, we examined the band gap opening of mono layer graphene due to the adsorption of pyrene molecules on both of its sides. It was found that the breakdown of the sublattice symmetry in pyrene-dispersed graphene leads to a band gap of ~10 meV.
dc.format.extent 6 p.
dc.language.iso en
dc.relation.ispartofseries Physical chemistry chemical physics
dc.rights © 2011 Royal Society of Chemistry. This is the author created version of a work that has been peer reviewed and accepted for publication by Physical Chemistry Chemical Physics, Royal Society of Chemistry. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [DOI: http://dx.doi.org/10.1039/C0CP00909A ]
dc.subject DRNTU::Engineering::Materials::Microelectronics and semiconductor materials.
dc.title Tight binding description on the band gap opening of pyrene-dispersed graphene
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1039/C0CP00909A
dc.description.version Accepted version
dc.identifier.rims 153760

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