mirage

1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process.

DSpace/Manakin Repository

 

Search DR-NTU


Advanced Search Subject Search

Browse

My Account

1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process.

Show full item record

Title: 1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process.
Author: Xu, D. W.; Yoon, Soon Fatt.; Ding, Y.; Tong, Cunzhu.; Fan, Weijun.; Zhao, L. J.
Copyright year: 2011
Abstract: We present the 1.3-μ m In(Ga)As quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) fabricated by the dielectric-free (DF) approach with the surface-relief (SR) process. Compared with the conventional dielectric-dependent (DD) method, the lower differential resistance and improved output power have been achieved by the DF approach. With the same oxide aperture area, the differential resistance is reduced by 36.47% and output power is improved by 78.32% under continuous-wave operation; it is up to 3.42 mW under pulsed operation with oxide aperture diameter ~15 μm. The surface-relief technique is also applied, for the first time, in 1.3- μm QD VCSELs, and it effectively enhances the emission of the fundamental mode. The characteristic of small signal modulation response is also analyzed.
Subject: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics.
Type: Journal Article
Series/ Journal Title: IEEE photonics technology letters
School: School of Electrical and Electronic Engineering
Rights: © 2010 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [DOI: http://dx.doi.org/10.1109/LPT.2010.2091269].
Version: Accepted version

Files in this item

Files Size Format View
1 3-µm In(Ga)As ... Surface-Relief Process.pdf 491.1Kb PDF View/Open
   

DOI Query

- Get published version (via Digital Object Identifier)
   

This item appears in the following Collection(s)

Show full item record

Statistics

Total views

All Items Views
1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process. 822

Total downloads

All Bitstreams Views
1 3-µm In(Ga)As Quantum-Dot VCSELs Fabricated by Dielectric-Free Approach With Surface-Relief Process.pdf 318

Top country downloads

Country Code Views
United States of America 101
China 84
Singapore 49
Japan 14
Iran 11

Top city downloads

city Views
Mountain View 51
Singapore 47
Beijing 41
Jingzhou 13
Redwood City 10