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1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process

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1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process

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dc.contributor.author Xu, D. W.
dc.contributor.author Yoon, Soon Fatt
dc.contributor.author Ding, Y.
dc.contributor.author Tong, Cunzhu
dc.contributor.author Fan, Weijun
dc.contributor.author Zhao, L. J.
dc.date.accessioned 2011-03-08T06:46:37Z
dc.date.available 2011-03-08T06:46:37Z
dc.date.copyright 2011
dc.date.issued 2011-03-08T06:46:37Z
dc.identifier.citation Xu, D. W., Yoon, S. F., Ding, Y., Tong, C., Fan, W., & Zhao, L. J. (2011). 1.3-μm In(Ga)As Quantum-dot VCSELs Fabricated by Dielectric-free Approach with Surface-relief Process. IEEE photonics technology letters, 23(2), 91-93.
dc.identifier.issn 1041-1135
dc.identifier.uri http://hdl.handle.net/10220/6756
dc.description.abstract We present the 1.3-μ m In(Ga)As quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) fabricated by the dielectric-free (DF) approach with the surface-relief (SR) process. Compared with the conventional dielectric-dependent (DD) method, the lower differential resistance and improved output power have been achieved by the DF approach. With the same oxide aperture area, the differential resistance is reduced by 36.47% and output power is improved by 78.32% under continuous-wave operation; it is up to 3.42 mW under pulsed operation with oxide aperture diameter ~15 μm. The surface-relief technique is also applied, for the first time, in 1.3- μm QD VCSELs, and it effectively enhances the emission of the fundamental mode. The characteristic of small signal modulation response is also analyzed.
dc.format.extent 11 p.
dc.language.iso en
dc.relation.ispartofseries IEEE photonics technology letters
dc.rights © 2010 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [DOI: http://dx.doi.org/10.1109/LPT.2010.2091269].
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics.
dc.title 1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process
dc.type Journal Article
dc.contributor.school School of Electrical and Electronic Engineering
dc.identifier.doi http://dx.doi.org/10.1109/LPT.2010.2091269
dc.description.version Accepted version
dc.identifier.rims 156404

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