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Fabrication of periodic square arrays by angle-resolved nanosphere lithography.

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Fabrication of periodic square arrays by angle-resolved nanosphere lithography.

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Title: Fabrication of periodic square arrays by angle-resolved nanosphere lithography.
Author: Lee, Kwang Hong.; Chen, Qiu Ling.; Yip, Chan Hoe.; Yan, Qingfeng.; Wong, Chee Cheong.
Copyright year: 2009
Abstract: We investigate the fabrication of periodic square arrays of solid gold islands by angle-resolved nanosphere lithography (ARNSL) in conjunction with thermal evaporation and etching. By varying θ (the tilt angle between the direction of gold deposition beam and the substrate surface normal) and (the substrate rotation angle about the beam axis), adjacent islands on a deposited hexagonal gold array will have a constant and periodic difference in height. Upon etching, this height bias will result in the shorter structures being removed to produce an array with a different symmetry from the original hexagonal symmetry of the parent mask. By depositing at three directions of = 0°, 120° and −120° with a constant θ = 20°, experimental results show that deposited two-dimensional gold periodic arrays will have a measurable difference in height between adjacent islands. Etching of the resulting patterns produced periodic near-square arrays with triangular nanostructures. Thus the combination of ARNSL and etching can allow selective periodic nanostructures to be removed, increasing the diversity of array symmetries available through nanosphere lithography.
Subject: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics.
Type: Journal Article
Series/ Journal Title: Microelectronics engineering
School: School of Materials Science and Engineering
Rights: © 2009 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Microelectronics Engineering, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [DOI: http://dx.doi.org/10.1016/j.mee.2009.11.169].
Version: Accepted version

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