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Charge transfer dynamics in Cu-doped ZnO nanowires.

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Charge transfer dynamics in Cu-doped ZnO nanowires.

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dc.contributor.author Xing, Guozhong.
dc.contributor.author Xing, Guichuan.
dc.contributor.author Li, Mingjie.
dc.contributor.author Sie, Edbert Jarvis.
dc.contributor.author Wang, Dandan.
dc.contributor.author Sulistio, Arief.
dc.contributor.author Ye, Quan Lin.
dc.contributor.author Huan, Alfred Cheng Hon.
dc.contributor.author Wu, Tom.
dc.contributor.author Sum, Tze Chien.
dc.date.accessioned 2011-06-23T02:50:08Z
dc.date.available 2011-06-23T02:50:08Z
dc.date.copyright 2011
dc.date.issued 2011-06-23T02:50:08Z
dc.identifier.citation Xing, G. Z., Xing, G. C., Li, M. J., Sie, E. J., Wang, D. D., Sulistio, A., & et al. (2011). Charge transfer dynamics in Cu-doped ZnO nanowires. Applied physics letters.
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10220/6830
dc.description.abstract Time resolved photoluminescence (TRPL) and transient absorption (TA) spectroscopy reveal an ultrafast charge transfer (CT) process, with an electron localization time constant 39±9 ps, between the ZnO host and the Cu dopants in Cu-doped ZnO nanowires. This CT process effectively competes with the ZnO band edge emission, resulting in the quenching of the ZnO UV emission. TRPL measurements show that the UV decay dynamics coincides with the buildup of the Cu-related green emission. TA measurements probing the state-filling of the band edge and defect states provide further support to the CT model where the bleaching dynamics concur with the TRPL lifetimes.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Applied physics letters
dc.subject DRNTU::Science::Chemistry::Physical chemistry.
dc.title Charge transfer dynamics in Cu-doped ZnO nanowires.
dc.type Journal Article
dc.contributor.school School of Physical and Mathematical Sciences
dc.description.version Accepted version
dc.identifier.rims 157527

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