| dc.contributor.author |
You, Lu. |
| dc.contributor.author |
Liang, Elvin. |
| dc.contributor.author |
Guo, Rui. |
| dc.contributor.author |
Wu, Di. |
| dc.contributor.author |
Yao, Kui. |
| dc.contributor.author |
Chen, Lang. |
| dc.contributor.author |
Wang, Junling. |
| dc.date.accessioned |
2011-07-05T04:00:22Z |
| dc.date.available |
2011-07-05T04:00:22Z |
| dc.date.copyright |
2010 |
| dc.date.issued |
2011-07-05T04:00:22Z |
| dc.identifier.citation |
You, L., Liang, E., Guo, R., Wu, D., Yao, K., Chen, L., et al. (2010). Polarization switching in quasiplanar BiFeO3 capacitors. Applied Physics Letters, 97, 062910. |
| dc.identifier.uri |
http://hdl.handle.net/10220/6850 |
| dc.description.abstract |
Polarization switching in multiferroic BiFeO3 is studied using a quasiplanar capacitor geometry. Macroscopic quantitative hysteresis measurements using single-pair electrodes yield results that agree well with the theoretical predictions. Nanoscale ferroelectric domain analyses reveal that highly aligned 71° stripe domains are created upon electrical switching. Careful reconstruction of the polarization configuration demonstrates that in-plane polarization reversal is achieved by a coherent 71° switching mechanism, consistent with the macroscopic measurement results. Such control of polarization switching in quasiplanar BiFeO3 capacitors is crucial for the electrical control of the multifunctionality of BiFeO3. |
| dc.language.iso |
en |
| dc.relation.ispartofseries |
Applied physics letters |
| dc.rights |
© 2010 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following DOI: http://dx.doi.org/10.1063/1.3479911. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. |
| dc.subject |
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films. |
| dc.subject |
DRNTU::Engineering::Materials::Magnetic materials. |
| dc.title |
Polarization switching in quasiplanar BiFeO3 capacitors. |
| dc.type |
Journal Article |
| dc.contributor.school |
School of Materials Science and Engineering |
| dc.identifier.doi |
http://dx.doi.org/10.1063/1.3479911 |
| dc.description.version |
Published version |
