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Temperature-dependent leakage current characteristics of Pr and Mn cosubstituted BiFeO3 thin films

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Temperature-dependent leakage current characteristics of Pr and Mn cosubstituted BiFeO3 thin films

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dc.contributor.author Wen, Zheng
dc.contributor.author Shen, Xuan
dc.contributor.author Wu, Jingxian
dc.contributor.author Wu, Di.
dc.contributor.author Li, Aidong
dc.contributor.author Yang, Bin
dc.contributor.author Wang, Zhu
dc.contributor.author Chen, Hengzhi
dc.contributor.author Wang, Junling
dc.date.accessioned 2011-07-05T06:03:55Z
dc.date.available 2011-07-05T06:03:55Z
dc.date.copyright 2010
dc.date.issued 2011-07-05T06:03:55Z
dc.identifier.citation Wen, Z., Shen, X., Wu, J., Wu, D., Li, A., Yang, B., et al. (2010). Temperature-dependent leakage current characteristics of Pr and Mn cosubstituted BiFeO3 thin films. Applied Physics Letters, 96.
dc.identifier.uri http://hdl.handle.net/10220/6853
dc.description.abstract Leakage current characteristics of (Bi0.86Pr0.14)(Fe0.95Mn0.05)O3 (BPFMO) thin films are studied at various temperatures from 293 down to 93 K. Space charge limited current and Poole–Frenkel (PF) emission are found to be the dominant mechanism in the low and the high electric fields, respectively. The trap ionization energy at zero-field in BPFMO films is deduced to be around 0.29 eV, which indicates the existence of shallow traps. A negative differential resistivity behavior is observed before the onset of PF emission at 93 K, which is discussed in terms of the competition between electron trapping and field-assisted thermal emission.
dc.language.iso en
dc.relation.ispartofseries Applied physics letters
dc.rights © 2010 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following DOI: http://dx.doi.org/10.1063/1.3432083. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
dc.subject DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films.
dc.subject DRNTU::Engineering::Materials::Magnetic materials.
dc.title Temperature-dependent leakage current characteristics of Pr and Mn cosubstituted BiFeO3 thin films
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.3432083
dc.description.version Published version

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