N-type behavior of ferroelectric-gate carbon nanotube network transistor

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N-type behavior of ferroelectric-gate carbon nanotube network transistor

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dc.contributor.author Cheah, Jun Wei
dc.contributor.author Shi, Yumeng
dc.contributor.author Ong, Hock Guan
dc.contributor.author Lee, Chun Wei
dc.contributor.author Li, Lain-Jong
dc.contributor.author Wang, Junling
dc.date.accessioned 2011-07-05T08:04:11Z
dc.date.available 2011-07-05T08:04:11Z
dc.date.copyright 2008
dc.date.issued 2011-07-05T08:04:11Z
dc.identifier.citation Cheah, J. W., Shi, Y., Ong, H. G., Lee, C. W., Li, L. J., & Wang, J. (2008). N-type behavior of ferroelectric-gate carbon nanotube network transistor. Applied Physics Letters, 93.
dc.identifier.uri http://hdl.handle.net/10220/6857
dc.description.abstract Carbon nanotube field effect transistor has attracted much attention recently and is a promising candidate for next generation nanoelectronics. Here, we report our study on a transistor using single wall carbon nanotube network as the channel and a ferroelectric film as the gate dielectric. The spontaneous polarization of ferroelectric materials offers nonvolatility and controllability of the surface charges. Modulation of >10^2 in the channel conductivity has been observed in the network-based transistor. Voltage pulses are used to control the transistor states; no continuous gate bias is needed. Furthermore, n-type behavior of the network channel is observed, which is attributed to a change in the Schottky barrier at the carbon nanotube-metal interface.
dc.language.iso en
dc.relation.ispartofseries Applied physics letters
dc.rights © 2008 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following DOI: http://dx.doi.org/10.1063/1.2975158. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
dc.subject DRNTU::Engineering::Materials::Nanostructured materials
dc.title N-type behavior of ferroelectric-gate carbon nanotube network transistor
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.2975158
dc.description.version Published version

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