mirage

Formation of Cu diffusion channels in Ta layer of a Cu/Ta/SiO2/Si structure

DSpace/Manakin Repository

 

Search DR-NTU


Advanced Search Subject Search

Browse

My Account

Formation of Cu diffusion channels in Ta layer of a Cu/Ta/SiO2/Si structure

Show full item record

Title: Formation of Cu diffusion channels in Ta layer of a Cu/Ta/SiO2/Si structure
Author: Li, S.; Dong, Zhili; Maung Latt, K.; Park, H. S.; White, Timothy John
Copyright year: 2002
Abstract: Three mechanisms for the formation of Cu diffusion channels in the Ta layer of a Cu/Ta/SiO2/Si structure are proposed. First, it is suggested that stacking faults formed during the recovery process induce localized regions of high internal energy in the Ta layer, from which Cu channels originate. Second, chemical reaction occurs at 800 °C and forms Ta4CuO11 across the Cu/Ta interface in Cu and Ta layers, which opens up channels for Cu diffusion. Third, triple junctions at the grain boundary of the Cu and Cu/Ta interface provide sites for the initiation of channel formation at 800 °C. At 950 °C, these channels in the diffusion barrier are absent, but Ta was oxidized into disordered Ta2O5 that may contain pathways for Cu diffusion.
Subject: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials.
Type: Journal Article
Series/ Journal Title: Applied physics letters
School: School of Materials Science and Engineering
Rights: © 2002 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at: [DOI: http://dx.doi.org/10.1063/1.1465107]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Version: Published version

Files in this item

Files Size Format View
81. Formation o ... a CuTaSiO2Si structure.pdf 404.8Kb PDF View/Open
   

DOI Query

- Get published version (via Digital Object Identifier)
   

This item appears in the following Collection(s)

Show full item record

Statistics

Total views

All Items Views
Formation of Cu diffusion channels in Ta layer of a Cu/Ta/SiO2/Si structure 330

Total downloads

All Bitstreams Views
81. Formation of Cu diffusion channels in Ta layer of a CuTaSiO2Si structure.pdf 289

Top country downloads

Country Code Views
United States of America 101
China 70
Singapore 43
Germany 25
Taiwan 8

Top city downloads

city Views
Mountain View 60
Beijing 56
Singapore 42
Kiez 10
Redmond 4