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Synthesis of boron nitride nanowires

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Synthesis of boron nitride nanowires

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dc.contributor.author Huo, K. F.
dc.contributor.author Hu, Z.
dc.contributor.author Chen, F.
dc.contributor.author Fu, J. J.
dc.contributor.author Chen, Yan
dc.contributor.author Liu, B. H.
dc.contributor.author Ding, Jun
dc.contributor.author Dong, Zhili
dc.contributor.author White, Timothy John
dc.date.accessioned 2011-07-13T07:39:08Z
dc.date.available 2011-07-13T07:39:08Z
dc.date.copyright 2002
dc.date.issued 2011-07-13
dc.identifier.citation Huo, K. F., Hu, Z., Chen, F., Fu, J. J., Chen, Y., Liu, B. H., et al. (2002). Synthesis of boron nitride nanowires. Applied Physics Letters, 80(19), 3611-3613.
dc.identifier.uri http://hdl.handle.net/10220/6895
dc.description.abstract A chemical method has been developed for synthesizing boron nitride nanowires through the reaction of a mixture gas of nitrogen (N2) and ammonia (NH3) over nanoscale α-FeB particles at 1100 °C. Boron content in the product comes from the α-FeB catalyst itself. Transmission electron microscopic image indicates an abundant quantity of BN nanowires with diameter about 20 nm and length up to several tens of microns. The product has also been characterized by high-resolution electron microscopy and electron energy loss spectrometer. The perfectly straight lattice fringes with an interlayer spacing of about 0.333 nm corresponding to d0002 spacing of h-BN indicate that the BN nanowires are well crystallized. Also, a growth mechanism has been speculated.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Applied physics letters
dc.rights © 2002 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at: [DOI: http://dx.doi.org/10.1063/1.1479213]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
dc.subject DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
dc.title Synthesis of boron nitride nanowires
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.1479213
dc.description.version Published version

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