Epitaxial BiFeO3 thin films on Si.

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Epitaxial BiFeO3 thin films on Si.

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dc.contributor.author Wang, J.
dc.contributor.author Zheng, H.
dc.contributor.author Ma, Z.
dc.contributor.author Prasertchoung, S.
dc.contributor.author Wuttig, M.
dc.contributor.author Droopad, R.
dc.contributor.author Yu, J.
dc.contributor.author Eisenbeiser, K.
dc.contributor.author Ramesh, R.
dc.date.accessioned 2011-07-14T03:47:22Z
dc.date.available 2011-07-14T03:47:22Z
dc.date.copyright 2004
dc.date.issued 2011-07-14
dc.identifier.citation Wang, J., Zheng, H., Ma, Z., Prasertchoung, S., Wuttig, M., Droopad, R., et al. (2004). Epitaxial BiFeO3 Thin Films on Si. Applied Physics Letters, 85(13), 2574-2576.
dc.identifier.uri http://hdl.handle.net/10220/6902
dc.description.abstract BiFeO3 was studied as an alternative environmentally clean ferro/piezoelectric material. 200-nm-thick BiFeO3 films were grown on Si substrates with SrTiO3 as a template layer and SrRuO3 as bottom electrode. X-ray and transmission electron microscopy studies confirmed the epitaxial growth of the films. The spontaneous polarization of the films was ~45μC/cm2. Retention measurement up to several days showed no decay of polarization. A piezoelectric coefficient (d33) of ~60 pm/V was observed, which is promising for applications in micro-electro-mechanical systems and actuators.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Applied physics letters
dc.rights © 2004 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following DOI: http://dx.doi.org/10.1063/1.1799234. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Microelectronics.
dc.title Epitaxial BiFeO3 thin films on Si.
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.1799234
dc.description.version Published version

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