mirage

Epitaxial BiFeO3 thin films on Si.

DSpace/Manakin Repository

 

Search DR-NTU


Advanced Search Subject Search

Browse

My Account

Epitaxial BiFeO3 thin films on Si.

Show simple item record

dc.contributor.author Wang, J.
dc.contributor.author Zheng, H.
dc.contributor.author Ma, Z.
dc.contributor.author Prasertchoung, S.
dc.contributor.author Wuttig, M.
dc.contributor.author Droopad, R.
dc.contributor.author Yu, J.
dc.contributor.author Eisenbeiser, K.
dc.contributor.author Ramesh, R.
dc.date.accessioned 2011-07-14T03:47:22Z
dc.date.available 2011-07-14T03:47:22Z
dc.date.copyright 2004
dc.date.issued 2011-07-14
dc.identifier.citation Wang, J., Zheng, H., Ma, Z., Prasertchoung, S., Wuttig, M., Droopad, R., et al. (2004). Epitaxial BiFeO3 Thin Films on Si. Applied Physics Letters, 85(13), 2574-2576.
dc.identifier.uri http://hdl.handle.net/10220/6902
dc.description.abstract BiFeO3 was studied as an alternative environmentally clean ferro/piezoelectric material. 200-nm-thick BiFeO3 films were grown on Si substrates with SrTiO3 as a template layer and SrRuO3 as bottom electrode. X-ray and transmission electron microscopy studies confirmed the epitaxial growth of the films. The spontaneous polarization of the films was ~45μC/cm2. Retention measurement up to several days showed no decay of polarization. A piezoelectric coefficient (d33) of ~60 pm/V was observed, which is promising for applications in micro-electro-mechanical systems and actuators.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Applied physics letters
dc.rights © 2004 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following DOI: http://dx.doi.org/10.1063/1.1799234. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Microelectronics.
dc.title Epitaxial BiFeO3 thin films on Si.
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.1799234
dc.description.version Published version

Files in this item

Files Size Format View
42. Epitaxial BiFeO3 Thin Films on Si.pdf 148.6Kb PDF View/Open

This item appears in the following Collection(s)

Show simple item record

Statistics

Total views

All Items Views
Epitaxial BiFeO3 thin films on Si. 509

Total downloads

All Bitstreams Views
42. Epitaxial BiFeO3 Thin Films on Si.pdf 522

Top country downloads

Country Code Views
China 154
United States of America 149
Singapore 40
Japan 23
India 21

Top city downloads

city Views
Mountain View 88
Beijing 77
Singapore 35
Changsha 11
Cambridge 7