Average density of states in disordered graphene systems

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Average density of states in disordered graphene systems

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Title: Average density of states in disordered graphene systems
Author: Wu, Shangduan; Jing, Lei; Li, Qunxiang; Shi, Q. W.; Chen, Jie; Su, Haibin; Wang, Xiaoping; Yang, Jinlong
Copyright year: 2008
Abstract: In this paper, the average density of states (ADOS) in graphene with binary alloy disorders is calculated by the recursion method. We observed an obvious resonant peak and a dip in ADOS curves near the Dirac point, which result from interactions with surrounding impurities. We also found that the resonance energy (Er) and the dip position (εdip) are strongly dependent on the concentration of disorders (x) and their on-site potentials (v). A linear relation, εdip=xv, holds when the impurity concentration is low. This relation can also be extended when the impurity concentration is high, but with certain constraints. We also compute ADOS with a finite density of vacancies.
Subject: DRNTU::Engineering::Materials::Nanostructured materials
Type: Journal Article
Series/ Journal Title: Physical review B
School: School of Materials Science and Engineering
Rights: © 2008 American Physical Society. This paper was published in Physical Review B and is made available as an electronic reprint (preprint) with permission of American Physical Society. The paper can be found at: [DOI: http://dx.doi.org/10.1103/PhysRevB.77.195411]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Version: Published version

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