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Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing

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Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing

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dc.contributor.author Cheng, Jian Gong
dc.contributor.author Wang, Junling
dc.contributor.author Dechakupt, Tanawadee
dc.contributor.author Trolier-McKinstry, Susan
dc.date.accessioned 2011-07-18T08:12:09Z
dc.date.available 2011-07-18T08:12:09Z
dc.date.copyright 2005
dc.date.issued 2011-07-18
dc.identifier.citation Chen, J. G., Wang, J., Dechakupt, T., & Trolier-McKinstry, S. (2005). Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing. Applied Physics Letters, 87.
dc.identifier.uri http://hdl.handle.net/10220/6913
dc.description.abstract The crystallization temperature of Bi1.5Zn0.5Nb1.5O6.5 (BZN) films was reduced by a combination of conventional heating and irradiation with a pulsed KrF excimer laser. Both the energy density and substrate temperature affect the properties of laser-annealed BZN films. It was found that the crystallinity and dielectric properties improved after a postannealing at 400 °C for 2 h in an oxygen atmosphere. BZN films crystallized with an energy density of 27 mJ/cm2 at a substrate temperature of 400 °C with postannealing showed dielectric properties comparable to those of rapid thermal annealed BZN films. Laser crystallization at substrate temperatures 400 °C makes integration with polymeric substrates possible.
dc.language.iso en
dc.relation.ispartofseries Applied physics letters
dc.rights © 2005 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following DOI: http://dx.doi.org/10.1063/1.2140071. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
dc.subject DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films.
dc.title Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.2140071
dc.description.version Published version

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