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Concurrent nonvolatile resistance and capacitance switching in LaAlO3

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Concurrent nonvolatile resistance and capacitance switching in LaAlO3

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dc.contributor.author Wu, Shuxiang
dc.contributor.author Peng, Haiyang
dc.contributor.author Wu, Tom
dc.date.accessioned 2011-07-19T04:50:14Z
dc.date.available 2011-07-19T04:50:14Z
dc.date.copyright 2011
dc.date.issued 2011-07-19
dc.identifier.citation Wu, S., Pen, H., & Wu, T. (2011). Concurrent nonvolatile resistance and capacitance switching in LaAlO3. Applied physics letters, 98.
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10220/6923
dc.description.abstract We report on the correlated nonvolatile resistance and capacitance switching in Pt/LaAlO3/Nb:SrTiO3 heterostructures. The pristine devices show the typical characteristics of a Schottky junction; however, after forming, a reverse bias switches the device into a low resistance and high capacitance state while a forward bias drives it into a high resistance and low capacitance state. Our experiments suggest that both the formation of conducting filaments and the modulation of interface barrier contribute to the resistance switching. Oxygen vacancies play critical roles in determining the switching characteristics and can be controlled in the process of device fabrication.
dc.format.extent 3 p.
dc.language.iso en
dc.relation.ispartofseries Applied physics letters
dc.rights Applied Physics Letters © copyright 1997 American Institute of Physics. The journal's website is located at http://apl.aip.org/.
dc.subject DRNTU::Engineering::Materials::Microelectronics and semiconductor materials.
dc.title Concurrent nonvolatile resistance and capacitance switching in LaAlO3
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/doi:10.1063/1.3560257
dc.description.version Published version
dc.identifier.rims 160546

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