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Growth, crystal structure, and properties of epitaxial BiScO3 thin films

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Growth, crystal structure, and properties of epitaxial BiScO3 thin films

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dc.contributor.author Trolier-McKinstry, Susan
dc.contributor.author Biegalski, Michael D.
dc.contributor.author Wang, Junling
dc.contributor.author Belik, Alexei A.
dc.contributor.author Takayama-Muromachi, Eiji.
dc.contributor.author Levin, Igor
dc.date.accessioned 2011-07-19T07:21:38Z
dc.date.available 2011-07-19T07:21:38Z
dc.date.copyright 2008
dc.date.issued 2011-07-19
dc.identifier.citation Trolier-McKinstry, S., Biegalski, M. D., Wang, J., Belik, A. A., Takayama-Muromachi, E., & Levin, I. (2008). Growth, Crystal Structure, and Properties of Epitaxial BiScO3 Thin Films. Journal of Applied Physics, 104.
dc.identifier.uri http://hdl.handle.net/10220/6932
dc.description.abstract Epitaxial thin films of BiScO3—a compound thermodynamically unstable under ambient conditions—were grown on BiFeO3-buffered SrTiO3 substrates. X-ray diffraction confirmed the reasonable crystalline quality of the films with a full width at half maximum of 0.58° in ω (004 reflection), 0.80° in ϕ (222 reflection), and 0.28° in θ. The epitaxial thin films of BiScO3 on SrTiO3 retain the principal structural features of bulk BiScO3 (i.e., octahedral tilting and the pattern of Bi displacements) that give rise to a pseudo-orthorhombic unit cell 2√2acX√2acX4ac (ac≈4 Å refers to the lattice parameter of an ideal cubic perovskite). Films grown on {100} substrates adopt the bulk monoclinic structure, whereas films on the (110) substrates appear to exhibit an orthorhombic symmetry. The dielectric permittivities were modest (≈30) with low loss tangents (<1% at low fields); no maxima were observed over a temperature range of −200 to +350 °C. There is no evidence of significant hysteresis (either ferroelectric or antiferroelectric) at room temperature up to the breakdown strength of the films.
dc.format.extent 7 p.
dc.language.iso en
dc.relation.ispartofseries Journal of applied physics
dc.rights © 2008 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following DOI: http://dx.doi.org/10.1063/1.2964087. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
dc.subject DRNTU::Engineering::Materials::Biomaterials.
dc.title Growth, crystal structure, and properties of epitaxial BiScO3 thin films
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1063/1.2964087
dc.description.version Published version

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