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Title:
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Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE.
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Author:
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Dharmarasu, N.; Radhakrishnan, K.; Sun, Z. Z.; Agrawal, M.
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Copyright year:
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2011 |
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Abstract:
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We report on the growth and characterization of AlN, GaN and AlGaN/GaN HEMT structure on 100-mm Si (111) by PA-MBE. AlN and GaN layers were grown as function of metal fluxes at a constant active nitrogen supply. Smooth surface morphology was achieved with metal rich growth conditions. Electrical properties of GaN were investigated as a function of Ga-flux. For the first time, the presence of 2DEG is demonstrated in AlGaN/GaN HEMT structure on Si (111) substrate by PA-MBE. A high electron mobility of 1100 cm2/V.sec is obtained with a sheet carrier density of 9 × 1012 cm-2. |
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Subject:
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DRNTU::Engineering::Materials::Microelectronics and semiconductor materials. |
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Type:
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Journal Article |
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Series/ Journal Title:
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Physica status solidi C |
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Rights:
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© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
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Version:
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Accepted version |
