| dc.contributor.author |
Dharmarasu, N. |
| dc.contributor.author |
Radhakrishnan, K. |
| dc.contributor.author |
Sun, Z. Z. |
| dc.contributor.author |
Agrawal, M. |
| dc.date.accessioned |
2011-08-01T07:40:56Z |
| dc.date.available |
2011-08-01T07:40:56Z |
| dc.date.copyright |
2011 |
| dc.date.issued |
2011-08-01 |
| dc.identifier.citation |
Dharmarasu, N., Radhakrishnan, K., Sun, Z. Z., & Agrawal, M. (2011). Realization of Two Dimensional Electron Gas in AlGaN/GaN HEMT Structure Grown on Si (111) by PA-MBE. Physica Status Solidi C, 8 (7-8), 2075–2077. |
| dc.identifier.uri |
http://hdl.handle.net/10220/6954 |
| dc.description.abstract |
We report on the growth and characterization of AlN, GaN and AlGaN/GaN HEMT structure on 100-mm Si (111) by PA-MBE. AlN and GaN layers were grown as function of metal fluxes at a constant active nitrogen supply. Smooth surface morphology was achieved with metal rich growth conditions. Electrical properties of GaN were investigated as a function of Ga-flux. For the first time, the presence of 2DEG is demonstrated in AlGaN/GaN HEMT structure on Si (111) substrate by PA-MBE. A high electron mobility of 1100 cm2/V.sec is obtained with a sheet carrier density of 9 × 1012 cm-2. |
| dc.relation.ispartofseries |
Physica status solidi C |
| dc.rights |
© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
| dc.subject |
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials. |
| dc.title |
Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE. |
| dc.type |
Journal Article |
| dc.identifier.doi |
http://dx.doi.org/10.1002/pssc.201001046 |
| dc.description.version |
Accepted version |
| dc.identifier.rims |
159549 |
