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Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE

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Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE

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dc.contributor.author Dharmarasu, Nethaji
dc.contributor.author Radhakrishnan, K.
dc.contributor.author Sun, Z. Z.
dc.contributor.author Agrawal, M.
dc.date.accessioned 2011-08-01T07:40:56Z
dc.date.available 2011-08-01T07:40:56Z
dc.date.copyright 2011
dc.date.issued 2011-08-01
dc.identifier.citation Dharmarasu, N., Radhakrishnan, K., Sun, Z. Z., & Agrawal, M. (2011). Realization of Two Dimensional Electron Gas in AlGaN/GaN HEMT Structure Grown on Si (111) by PA-MBE. Physica Status Solidi C, 8 (7-8), 2075–2077.
dc.identifier.uri http://hdl.handle.net/10220/6954
dc.description.abstract We report on the growth and characterization of AlN, GaN and AlGaN/GaN HEMT structure on 100-mm Si (111) by PA-MBE. AlN and GaN layers were grown as function of metal fluxes at a constant active nitrogen supply. Smooth surface morphology was achieved with metal rich growth conditions. Electrical properties of GaN were investigated as a function of Ga-flux. For the first time, the presence of 2DEG is demonstrated in AlGaN/GaN HEMT structure on Si (111) substrate by PA-MBE. A high electron mobility of 1100 cm2/V.sec is obtained with a sheet carrier density of 9 × 1012 cm-2.
dc.relation.ispartofseries Physica status solidi C
dc.rights © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
dc.subject DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
dc.title Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE
dc.type Journal Article
dc.identifier.doi http://dx.doi.org/10.1002/pssc.201001046
dc.description.version Accepted version
dc.identifier.rims 159549

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