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Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition

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Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition

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Title: Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition
Author: Fam, Derrick Wen Hui; Tok, Alfred Iing Yoong
Copyright year: 2009
Abstract: This communication reports on the novel work of creating a transistor channel based on functionalized single-walled carbon nanotubes (SWNTs) via electrostatic atomization deposition. The current method of drop-cast though convenient was unable to produce replicable transistor device due to its inherent inability in controlling the volume of liquid being drop-cast. Hence, this method of electrostatic atomization was introduced to consistently obtain a uniformly distributed SWNT channel resulting in a good transistor device.
Subject: DRNTU::Engineering::Materials::Nanostructured materials.
Type: Journal Article
Series/ Journal Title: Journal of colloid and interface science
School: School of Materials Science and Engineering
Rights: © 2009 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Journal of Colloid and Interface Science, Elsevier.  It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document.  The published version is available at: http://dx.doi.org/10.1016/j.jcis.2009.06.003.
Version: Accepted version

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