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Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition.

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Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition.

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dc.contributor.author Fam, Derrick Wen Hui.
dc.contributor.author Tok, Alfred Iing Yoong.
dc.date.accessioned 2011-08-12T04:25:50Z
dc.date.available 2011-08-12T04:25:50Z
dc.date.copyright 2009
dc.date.issued 2011-08-12
dc.identifier.citation Fam, D. W. H., & Tok, A. I. Y. (2009). Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition. Journal of Colloid and Interface Science, 338, 266-269.
dc.identifier.uri http://hdl.handle.net/10220/6959
dc.description.abstract This communication reports on the novel work of creating a transistor channel based on functionalized single-walled carbon nanotubes (SWNTs) via electrostatic atomization deposition. The current method of drop-cast though convenient was unable to produce replicable transistor device due to its inherent inability in controlling the volume of liquid being drop-cast. Hence, this method of electrostatic atomization was introduced to consistently obtain a uniformly distributed SWNT channel resulting in a good transistor device.
dc.language.iso en
dc.relation.ispartofseries Journal of colloid and interface science
dc.rights © 2009 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Journal of Colloid and Interface Science, Elsevier.  It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document.  The published version is available at: http://dx.doi.org/10.1016/j.jcis.2009.06.003.
dc.subject DRNTU::Engineering::Materials::Nanostructured materials.
dc.title Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition.
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1016/j.jcis.2009.06.003
dc.description.version Accepted version
dc.identifier.rims 157868

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