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Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE.

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Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE.

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dc.contributor.author Dharmarasu, Nethaji.
dc.contributor.author Agrawal, M.
dc.contributor.author Radhakrishnan, K.
dc.contributor.author Sun, Z. Z.
dc.date.accessioned 2011-09-16T01:02:09Z
dc.date.available 2011-09-16T01:02:09Z
dc.date.copyright 2011
dc.date.issued 2011-09-16
dc.identifier.citation Dharmarasu, N., Agrawal, M., Radhakrishnan, K., & Sun, Z. Z. (2011). Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE. Paper presented at the 9th International Conference on Nitride Semiconductors.
dc.identifier.uri http://hdl.handle.net/10220/7079
dc.description.abstract Recently, AlGaN/GaN HEMTs grown on 100 mm diameter Si using plasma assisted molecular beam epitaxy (PA-MBE) have been demonstrated [1,2]. In these structures, the growth rate is limited by the active nitrogen species available from the nitrogen plasma. Consequently, longer growth times are required to achieve thicker buffer layer necessary for the device structures. However, the narrow growth widow for the GaN layer in PA-MBE technique is affected by the fluctuation in substrate temperature and material fluxes during the long growth period.
dc.format.extent 1 p.
dc.language.iso en
dc.rights © 2011 9th International Conference on Nitride Semiconductors.  This is the author created version of a work that has been peer reviewed and accepted for publication by 9th International Conference on Nitride Semiconductors.  It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document.  The official conference website is: http://www.icns9.org/.
dc.subject DRNTU::Engineering::Electrical and electronic engineering::Semiconductors.
dc.title Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE.
dc.type Conference Paper
dc.contributor.conference International Conference on Nitride Semiconductors (9th : 2011 : Glasgow, Scotland, UK)
dc.contributor.school School of Electrical and Electronic Engineering
dc.description.version Accepted version
dc.identifier.rims 159550

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