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Hydrostatic stress and hydrostatic stress gradients in passivated copper interconnects

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Hydrostatic stress and hydrostatic stress gradients in passivated copper interconnects

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dc.contributor.author Ang, Derrick
dc.contributor.author Ramanujan, Raju V.
dc.date.accessioned 2011-10-13T01:18:01Z
dc.date.available 2011-10-13T01:18:01Z
dc.date.copyright 2006
dc.date.issued 2011-10-13
dc.identifier.citation Ang, D., & Ramanujan, R. V. (2006). Hydrostatic Stress and Hydrostatic Stress Gradients in Passivated Copper Interconnects. Materials Science and Engineering: A, 423, 157-165.
dc.identifier.issn 0921-5093
dc.identifier.uri http://hdl.handle.net/10220/7255
dc.description.abstract A numerical evaluation of the effects of geometrical factors on the hydrostatic stress and hydrostatic stress gradients in passivated copper interconnects was performed. These values were correlated with experimental values in the literature on the location of voids in the interconnect. Copper interconnects of aspect ratios between 0.1 and 10 were studied. Numerical work using the commercial ANSYS software and analytical work based on the Eshelby andWikstr¨om models were performed. Comparison is made between the analytical, numerical and experimental results (obtained from the literature). It was found that for an interconnect with no pre-existing voids, maximum hydrostatic stress gradients occurred at the corners of the interconnects suggesting that void growth is most probable at the corners of the interconnect. The stress gradient within the interconnect with aspect ratio of 10 is about 10 times larger than that in interconnects of aspect ratios 0.1 and 1. This suggests that the narrowest interconnects are most likely to undergo voiding. This study found that it is insufficient to look only at the hydrostatic stress at the centre of the interconnect and that stress gradient also needs to be taken into consideration to assess reliability.
dc.format.extent 9 p.
dc.language.iso en
dc.relation.ispartofseries Materials science and engineering: A
dc.rights © 2006 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Materials Science and Engineering: A, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [DOI: http://dx.doi.org/10.1016/j.msea.2005.10.079].
dc.subject DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
dc.title Hydrostatic stress and hydrostatic stress gradients in passivated copper interconnects
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1016/j.msea.2005.10.079
dc.description.version Accepted version
dc.identifier.rims 143647

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