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Study of low-temperature thermocompression bonding in Ag-In solder for packaging applications

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Study of low-temperature thermocompression bonding in Ag-In solder for packaging applications

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dc.contributor.author Made, Riko I.
dc.contributor.author Gan, Chee Lip
dc.contributor.author Yan, Li Ling
dc.contributor.author Yu, Aibin
dc.contributor.author Yoon, Seung Wook
dc.contributor.author Lau, John H.
dc.contributor.author Lee, Chengkuo
dc.date.accessioned 2011-10-13T05:46:12Z
dc.date.available 2011-10-13T05:46:12Z
dc.date.copyright 2009
dc.date.issued 2011-10-13
dc.identifier.citation Made, R. I., Gan, C. L., Yan, L. L., Yu, A., Yoon, S. W., Lau, J. H., et al. (2009). Study of Low-Temperature Thermocompression Bonding in Ag-In Solder for Packaging Applications. Journal of Electronic Materials, 38, 365-371.
dc.identifier.issn 0361-5235
dc.identifier.uri http://hdl.handle.net/10220/7261
dc.description.abstract Low-temperature solders have wide applications in integrated circuits and micro-electromechanical systems packaging. In this article, a study on Ag-In solder for chip-to-chip thermocompression bonding was carried out. The resulting joint consists of AgIn2 and Ag9In4 phases, with the latter phase having a melting temperature higher than 400 C. Complete consumption of In solder into a Ag-rich intermetallic compound is achieved by applying a bond pressure of 1.4 MPa at 180 C for 40 min. We also observe that the bonding pressure effect enables a Ag-rich phase to be formed within a shorter bonding duration (10 min) at a higher pressure of 1.6 MPa. Finally, prolonged aging leads to the formation of the final phase of Ag9In4 in the bonded joints.
dc.format.extent 7 p.
dc.language.iso en
dc.relation.ispartofseries Journal of electronic materials
dc.rights © 2008 TMS.
dc.subject DRNTU::Engineering::Materials::Electronic packaging materials
dc.subject DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
dc.title Study of low-temperature thermocompression bonding in Ag-In solder for packaging applications
dc.type Journal Article
dc.contributor.school School of Materials Science and Engineering
dc.identifier.doi http://dx.doi.org/10.1007/s11664-008-0555-8
dc.contributor.organization Institute of Microelectronics Singapore
dc.identifier.rims 142282

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