| dc.contributor.author |
Made, Riko I. |
| dc.contributor.author |
Gan, Chee Lip. |
| dc.contributor.author |
Yan, Li Ling. |
| dc.contributor.author |
Yu, Aibin. |
| dc.contributor.author |
Yoon, Seung Wook. |
| dc.contributor.author |
Lau, John H. |
| dc.contributor.author |
Lee, Chengkuo. |
| dc.date.accessioned |
2011-10-13T05:46:12Z |
| dc.date.available |
2011-10-13T05:46:12Z |
| dc.date.copyright |
2008 |
| dc.date.issued |
2011-10-13 |
| dc.identifier.citation |
Made, R. I., Gan, C. L., Yan, L. L., Yu, A., Yoon, S. W., Lau, J. H., et al. (2008). Study of Low-Temperature Thermocompression Bonding in Ag-In Solder for Packaging Applications. Journal of Electronic Materials, 38, 365-371. |
| dc.identifier.issn |
0361-5235 |
| dc.identifier.uri |
http://hdl.handle.net/10220/7261 |
| dc.description.abstract |
Low-temperature solders have wide applications in integrated circuits and
micro-electromechanical systems packaging. In this article, a study on Ag-In
solder for chip-to-chip thermocompression bonding was carried out. The
resulting joint consists of AgIn2 and Ag9In4 phases, with the latter phase
having a melting temperature higher than 400 C. Complete consumption of In
solder into a Ag-rich intermetallic compound is achieved by applying a bond
pressure of 1.4 MPa at 180 C for 40 min. We also observe that the bonding
pressure effect enables a Ag-rich phase to be formed within a shorter bonding
duration (10 min) at a higher pressure of 1.6 MPa. Finally, prolonged aging
leads to the formation of the final phase of Ag9In4 in the bonded joints. |
| dc.format.extent |
7 p. |
| dc.language.iso |
en |
| dc.relation.ispartofseries |
Journal of electronic materials |
| dc.rights |
© 2008 TMS. |
| dc.subject |
DRNTU::Engineering::Materials::Electronic packaging materials. |
| dc.subject |
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films. |
| dc.title |
Study of low-temperature thermocompression bonding in Ag-In solder for packaging applications. |
| dc.type |
Journal Article |
| dc.contributor.school |
School of Materials Science and Engineering |
| dc.identifier.doi |
http://dx.doi.org/10.1007/s11664-008-0555-8 |
| dc.description.version |
Accepted version |
| dc.contributor.organization |
Institute of Microelectronics Singapore |
